Interposer, a method for manufacturing the same and an electronic circuit package

Abstract

An interposer including: a substrate including a first layer and second layer, wherein the first layer and second layer are positioned parallel to each other; electrodes each having a concave-convex structure formed on each facing surface of the first layer and second layer of the substrate; a dielectric layer sandwiched between the electrodes which are formed on each facing surface of the first layer and second layer of the substrate; a first conductive part which vertically passes through the first layer of the substrate from a first outer surface of the substrate and is electrically connected to an electrode formed on a surface of the second layer of the substrate that faces the first layer of the substrate; and a second conductive part which vertically passes through the second layer of the substrate from a second outer surface of the substrate and is electrically connected to an electrode formed on a surface of the first layer of the substrate that faces the second layer of the substrate.

Description

FIELD OF THE TECHNOLOGY[0001]The present invention is related to an interposer having a capacitor to mount electronic components such as an IC, a method for manufacturing the interposer and an electronic circuit package.BACKGROUND TECHNOLOGY[0002]To prevent noise or the like which occurs in electronic circuits, and to maintain a steady function of semiconductor IC equipment and the like, a capacitor such as a bypass capacitor or a decoupling capacitor is connected between signal terminals and ground circuits, or between power-source terminals and ground circuits of a semiconductor IC component. Also, an interposer made of a silicon substrate is used, for example, between a semiconductor chip and a wiring substrate, or used as a relay substrate to form interlayer interconnections in a semiconductor chip. Technology to form the above-mentioned capacitor in an interposer has been already developed.[0003]For example, a method to form a capacitor on a silicon substrate is described in Pu...

AI Technical Summary

Benefits of technology

[0007]The present invention was designed to overcome the above-described problems. The objective of the present invention is to prevent moisture absorption at the dielectric in a capacitor and to produce a capacitor having little degradation of electrical characteristics.

Problems solved by technology

However, in a method in which a silicon capacitor is manufactured by forming a trench structure in a silicon substrate, it is expected that the dielectric in the capacitor will absorb moisture during the manufacturing process of the capacitor, and the leakage of electric current will expand.

Furthermore, when the capacitor is installed in a circuit package, potential electric shortages may occur between capacitor electrodes due to the absorbed moisture in the dielectric.

In a conventional capacitor, when a solution treatment is applied to exfoliate the support substrate from the interposer, potential degradation of the electrical characteristics of the capacitor may occur due to solution seepage into the dielectric or bond residue.

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