Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit
a heater unit and wafer technology, applied in the direction of instruments, basic electric elements, measurement devices, etc., can solve the problems of long time between the increase and decrease temperature of the heater, the contact failure between the wafer and the probe pin, and the improvement of the throughput, so as to effectively prevent the contact failure and improve the heat-insulating effect, the effect of less susceptible to deformation
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[0118] Wafer holder 100 shown in FIG. 1 was fabricated. An Si—SiC substrate having the diameter of 310 mm and the thickness of 15 mm was prepared. On one surface of the substrate, a concentric trench and through holes for vacuum chucking a wafer were formed, and nickel plating was applied as the chuck top conductive layer 3, to provide a wafer-mounting surface. Thereafter, the wafer-mounting surface was polished and finished to have the overall warp amount of 10 μm and the surface roughness Ra of 0.02 μm, and chuck top 2 was completed.
[0119] Thereafter, a mullite-alumina composite body of a pillar shape having the diameter of 310 mm and thickness of 40 mm was prepared as supporter 4. The surface of supporter 4 in contact with the chuck top and the bottom surface are finished to the flatness of 0.09 mm, and the surface on the side of chuck top 2 was counter-bored to have the inner diameter of 290 mm and the depth of 20 mm, to provide the space for mounting heater body 6 shown in FIG...
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