Ferromagnetic liner for conductive lines of magnetic memory cells

Abstract

A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application relates to the following co-pending and commonly assigned patent application: U.S. Ser. No. 10 / 249,528, filed on Apr. 17, 2003, entitled, “Magnetically Lined Conductors,” which application is hereby incorporated herein by reference.TECHNICAL FIELD [0002] The present invention relates generally to the fabrication of semiconductor devices, and more particularly to the fabrication of magnetic memory devices. BACKGROUND [0003] Semiconductors are used in integrated circuits for electronic applications, including radios, televisions, cell phones, and personal computing devices, as examples. One type of semiconductor device is a semiconductor storage device, such as a dynamic random access memory (DRAM) or flash memory, which use electric charge to store information. [0004] A recent development in semiconductor memory devices involves spin electronics, which combines semiconductor technology and magnetics. The spin of electron...

AI Technical Summary

Benefits of technology

The present invention provides methods for forming conductive lines and ferromagnetic liners in MRAM devices. The use of ferromagnetic liners helps to focus the magnetic field of the conductive wires onto the memory elements, reducing the required current for switching the polarity of the memory element. The conductive lines are plated, allowing for easier formation of the ferromagnetic liner in the desired shape. The technical effects of the invention include reducing the write current and power consumption of the MRAM device, as well as improving the efficiency of the memory elements.

Problems solved by technology

Because MRAM devices operate differently than traditional memory devices and because they are relatively new, they introduce design and manufacturing challenges.

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