Multideposition SACVD reactor

Abstract

There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si3N4, SiO2, and SiON and non-&electric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.

Description

FIELD OF THE INVENTION [0001] The present invention relates to the manufacture of semiconductor integrated circuits (ICs) and more particularly to a multideposition sub-atmospheric chemical vapor deposition (SACVD) reactor enabling the rapid thermal deposition of dielectric materials such Si3N4, SiO2, and SiON and of non-dielectric materials such as polysilicon onto a substrate. According to the present invention, said dielectric / non-dielectric materials can be now deposited according to the desired sequence in the same chamber of the multideposition SACVD reactor, significantly reducing cycle time, total thermal budget and pattern factor effects. BACKGROUND OF TE INVENTION [0002] Short cycle time and low thermal budget are certainly the most critical points for Application Specific Integrated Circuit (ASIC) and Dynamic Random Access Memory (DRAM) products manufacturing respectively. The continuous technical progress in the last decades has resulted in the emergence of new technique...

AI Technical Summary

Benefits of technology

[0036] It is therefore a primary object of the present invention to provide a multideposition CVD reactor enabling the rapid thermal deposition of dielectric materials such as Si3N4, SiO2, and SiON and non-dielectric materials such as polysilicon onto a substrate in the same chamber of the reactor.

[0037] It is another primary object of the present invention to provide a multideposition CVD reactor provided with multiple chambers enabling the rapid thermal deposition of dielectric materials such as Si3N4, SiO2, and SiON and non-dielectric materials such as polysilicon onto a substrate in two dedicated chambers of the reactor.

[0038] It is another object of the present invention to provide a multideposition CVD reactor enabling the rapid thermal deposition of dielectric materials such as Si3N4, SiO2, and SiON and non-dielectric materials such as polysilicon onto a substrate that is particularly adapted to ASIC production (short cycle times and low thermal budget).

Problems solved by technology

Foreign elements that are incorporated into the deposited films during fabrication also drive device performance, and thus are becoming more important to date, as devices become more and more dense and complex.

As a whole, these operations are time consuming.

It is not possible to deposit the Si3N4 material in the same AME Centura reactor because processing chambers are strictly limited to the deposition of polysilicon films or WSix films.

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