Method and apparatus for substrate temperature control

Abstract

A method and apparatus for gas control is provided. The apparatus may be used for controlling gases delivered to a chamber, controlling the chamber pressure, controlling the delivery of backside gas between a substrate and substrate support and the like. In one embodiment, an apparatus for controlling gas control includes at least a first flow sensor having a control valve, a first pressure sensor and at least a second pressure sensor. An inlet of the first flow sensor is adapted for coupling to a gas supply. A control valve is coupled to an outlet of the flow sensor. The first pressure sensor is adapted to sense a metric indicative of the pressure upstream of the first flow sensor. The second pressure sensor is adapted to sense a metric indicative of the pressure downstream of the control valve.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims benefit of U.S. provisional patent application Ser. No. 60 / 527,428, filed Dec. 4, 2003, which is herein incorporated by reference in its entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] Embodiments of the present invention generally relate to a method and apparatus for controlling pressure and measuring flow. More specifically, embodiments of the invention generally relate to a method and apparatus for controlling gas provided between a substrate and a substrate support in a semiconductor processing chamber or to a semiconductor processing chamber. [0004] 2. Description of the Related Art [0005] Substrate temperature is an important process control attribute critical to many microelectronic device fabrication processes. Providing gas between the substrate and a substrate support in a semiconductor processing chamber is a well-known method for improving heat transfer between the substra...

AI Technical Summary

Benefits of technology

[0016] A method and apparatus for gas control is provided. The method and apparatus may be used for controlling gases delivered to a chamber, controlling the chamber pressure, controlling the delivery of backside gas between a substrate and substrate support and the like. In one embodiment, an apparatus for controlling gas control includes at least a first flow sensor having a control valve, a first pressu

Problems solved by technology

In addition accelerated response to change in pressure set points is needed to reduce process cycle times. For example, gas temperature and / or pressure fluctuations upstream of the gas delivery system may make the flow through the flow sensor unstable, thereby reducing the accuracy of the correlation between the flow indicated and the actual flow to both the area between the substrate and substrate support and the restrictor.

Additionally, variation in the vacuum provided by the vacuum source may impact the flow through the restrictor, which may falsely indicate or contribute to erroneous interpretation of the amount of gas disposed between substrate and substrate support.

In critical applications, the gas available as a heat transfer medium between the substrate and substrate support may vary, leading to deviation in substrate to substrate process performance.

In addition, the system as described in FIG. 1 is unable to determine the rate of gas flowing into the area between the substrate support and substrate or to determine small variations in the rate of gas leakage between the substrate support and substrate that may cause the heat transfer characteristics and uniformity to vary, thereby resulting in unwanted variation in processing performance.

However in an application where the conductance between the throttle valve and the chamber is much smaller then the controllable conductance of the throttle valve, it is not possible to control chamber pressure with a throttle valve between the chamber and a vacuum pump.

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