Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Medium power low voltage frequency converter based on insulation grating bipolar transistor

A bipolar transistor, medium power technology, applied in the direction of converting AC power input to AC power output, AC power input converting to DC power output, output power conversion device, etc. Small, small stray inductance, compact structure

Inactive Publication Date: 2007-06-27
BEIJING ARITIME INTELLIGENT CONTROL +1
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, IGBT is a complex integrated structure, and its working principle is more complicated. One of its outstanding performances is that its operating frequency can be much higher than that of bipolar transistors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Medium power low voltage frequency converter based on insulation grating bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The accompanying drawing is an embodiment of the present invention. Wherein, the laminated busbar 4 includes two layers of connecting busbars, and the two layers of connecting busbars are separated by a laminated busbar insulating plate 5 . The laminated bus bar is covered on the DC capacitor 2, one side is connected to the diode module, and the other side is directly connected to the DC terminal of the IGBT power module 6 and the absorbing capacitor 3 with screws. The output terminals of each IGBT power module are connected in parallel through bus bars.

[0010] In the present invention, the electrical connection between the circuits of each IGBT power device is realized by a laminated busbar, and the laminated busbar is closely attached to the device, which structurally reduces the loop area of ​​the connecting circuit. The test results prove that this design significantly reduces the connecting circuit. The stray inductance increases the output power of the power mo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to a mid-power low voltage frequency converter based on an insulation grid dual polarity transistor including: a mean-voltage resistor, a DC capacitor, an absorption capacitor, a cascade bus, a cascade bus insulation board, an IGBT power module, an input power terminal, a redtifying diode, an output power terminal, a radiator, a fan, a wheel and a current sensor, which is advantaged that the structure is compact, the volume is small, power density is big and easy to be installed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a medium-power low-voltage frequency converter based on an insulated gate bipolar transistor (IGBT), which is suitable for frequency converters with a power of 210-800KVA. The device can be widely used in the field of transmission. Background technique [0002] IGBT is the abbreviation of the English name of the insulated gate transistor (Insulated Gate Bipolar Transistor-IGBT). The original intention of the invention of the IGBT is to simplify the driving circuit of the power device and reduce the driving power consumption. Both transistors and thyristors have matured as power devices in the 1960s. However, the driving power consumption of this kind of bipolar power device is large and the circuit is complicated, which makes the equipment cost high. In the 1970s, the power MOSFET was successfully researched. It is a majority-carrier device controlled b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M1/00H02M5/00H02M7/537H05K7/00H05K7/02H05K7/20
Inventor 朱春毅李崇坚赵如凡杨溪林李江路尚书胡培青王鹏葛钢杨琼涛
Owner BEIJING ARITIME INTELLIGENT CONTROL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com