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Method of manufacturing semiconductor device using polycrystalline silicon annealed by solid-state laser

A technology of polycrystalline silicon thin film and amorphous silicon thin film, which is used in semiconductor/solid state device manufacturing, electrical components, circuits, etc., can solve the problems of insufficient quality of materials and high processing temperature, and achieve low cost, high quality and uniformity. and good repeatability

Inactive Publication Date: 2007-06-06
THE HONG KONG UNIV OF SCI & TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

The laser is relatively cheap, but the technology is processed at high temperatures and the quality of the material produced is not good enough

Method used

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  • Method of manufacturing semiconductor device using polycrystalline silicon annealed by solid-state laser
  • Method of manufacturing semiconductor device using polycrystalline silicon annealed by solid-state laser
  • Method of manufacturing semiconductor device using polycrystalline silicon annealed by solid-state laser

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Embodiment Construction

[0037] The present invention is described in detail as follows with reference to accompanying drawing:

[0038] The method of fabricating a semiconductor device using metal-induced crystallization of polysilicon annealed by a solid-state laser is described below, see FIGS. 1-9.

[0039] FIG. 1 : A schematic cross-sectional view of an amorphous silicon film 103 and a mask layer 104 deposited on a substrate 101 covered with an insulating layer 102 .

[0040] The substrate can be one of high temperature polymer, glass, stainless steel, polycrystalline silicon or single crystal silicon containing prefabricated conventional integrated circuits.

[0041] The transition layer can withstand processing at a processing temperature higher than 650° C. for a long time, including but not limited to silicon oxide, silicon oxynitride, and silicon nitride.

[0042] An amorphous silicon film 103 with a thickness of 10 nanometers to 3 micrometers is formed at a low temperature of 150°C-600°C. ...

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Abstract

Amorphous silicon can form device-grade polysilicon after metal-induced lateral crystallization. What the present invention tells is the technology of preparing semiconductor device by using solid laser annealed metal rust guided crystallization polysilicon thin film (including vertical and lateral crystallization directions). The metal-induced polysilicon film is formed by annealing the amorphous silicon film with metal nickel through the furnace tube. In order to improve the quality of this kind of polysilicon film, solid-state laser is used to anneal the above polysilicon film to reduce the film structure defects and the influence of metal nickel elements on the properties of the film, but the main grain structure of the metal-induced polysilicon will not be changed during the annealing process. . Doping activation in the device also uses a solid-state laser. Compared with excimer lasers, solid-state lasers are relatively cheap and easy to operate, and are suitable for industrial production. The polysilicon material has a wide range of applications, such as sensors, electronic devices, flat panel displays and three-dimensional circuits.

Description

technical field [0001] What the present invention tells is the technique of preparing semiconductor devices by using solid laser annealing metal-induced crystallization polysilicon film (including vertical and lateral crystallization directions). The metal-induced polysilicon film is formed by annealing the amorphous silicon film with metal nickel through the furnace tube. In order to improve the quality of this kind of polysilicon film, solid-state laser is used to anneal the above polysilicon film to reduce the film structure defects and the influence of metal nickel elements on the properties of the film, but the main grain structure of the metal-induced polysilicon will not be changed during the annealing process. . Doping activation in the device also uses a solid-state laser. Compared with excimer lasers, solid-state lasers are relatively cheap and easy to operate, and are suitable for industrial production. [0002] The polysilicon material has a wide range of applic...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/336
Inventor 王文郭海成孟志国
Owner THE HONG KONG UNIV OF SCI & TECH
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