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Near infrared organic electroluminescent materials and devices and method for fabricating the device

A technology of electroluminescent materials and electroluminescent devices, which is applied in the direction of luminescent materials, electroluminescent light sources, chemical instruments and methods, etc., can solve the problems that the performance of infrared organic light-emitting devices does not meet the application requirements, and achieve easy processing and improved The effect of luminous intensity and simple preparation process

Inactive Publication Date: 2007-05-30
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the performance of infrared organic light-emitting devices prepared with the current material system is far from meeting the application requirements. It is urgent to develop a new infrared organic electroluminescent material system to provide materials for the application of organic electroluminescent devices in optical fiber communication.

Method used

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  • Near infrared organic electroluminescent materials and devices and method for fabricating the device
  • Near infrared organic electroluminescent materials and devices and method for fabricating the device
  • Near infrared organic electroluminescent materials and devices and method for fabricating the device

Examples

Experimental program
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Embodiment 1

[0035] First, the ITO on the ITO glass is photoetched into electrodes with a width of 5 mm and a length of 30 mm, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and immediately spin-coated a layer of PEDOT:PSS conductive polymer on it , put it in an oven and dry at 110°C for 30 minutes to remove moisture, and the thickness of the PEDOT:PSS film is about 50 nanometers. A chloroform solution of infrared dye ADS830AT doped with polyvinyl carbazole (PVK) and cadmium selenide / cadmium sulfide (CdSe / CdS) nanoparticles was spin-coated on PEDOT:PSS to obtain a luminescent layer with a thickness of 100 nm. Then transfer it to the vacuum coating system until the vacuum degree reaches 1-5×10 -1 Pascal deposited 200nm-thick metal Al on the light-emitting layer to prepare an infrared organic electroluminescent device with a structure of ITO / / PEDOT:PSS / / ADS830AT:CdSe / CdS:PVK / / Al. Wherein the evaporation rate of the Al electrode is controlled at 5 nanometers per...

Embodiment 2

[0037] First, the ITO on the ITO glass is photoetched into electrodes with a width of 5 mm and a length of 30 mm, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and immediately spin-coated a layer of PEDOT:PSS conductive polymer on it , put it in an oven and dry at 110°C for 30 minutes to remove moisture, and the thickness of the PEDOT:PSS film is about 50 nanometers. A chloroform solution of polyvinylcarbazole (PVK) blended with infrared dye ADS830AT doped with cadmium telluride (CdTe) nanoparticles was spin-coated on PEDOT:PSS to obtain a luminescent layer with a thickness of 100 nanometers. Then transfer it to the vacuum coating system until the vacuum degree reaches 1-5×10 -4 At Pascal, 200nm-thick metal Al was vapor-deposited on the light-emitting layer to prepare an infrared organic electroluminescent device with a structure of ITO / / PEDOT:PSS / / ADS830AT:PVK-CdTe / / Al, wherein the evaporation rate of the Al electrode Controlled at 5 nanometers...

Embodiment 3

[0039] First, the ITO on the ITO glass is photoetched into electrodes with a width of 5 mm and a length of 30 mm, then cleaned, dried with nitrogen, treated with oxygen plasma for 2 minutes, and immediately spin-coated a layer of PEDOT:PSS conductive polymer on it , placed in an oven and dried at 110°C for 30 minutes to remove moisture, and the thickness of the PEDOT:PSS film was about 50 nanometers. A chloroform solution of infrared dye ADS830AT doped with polyvinyl carbazole (PVK) and cadmium selenide / cadmium sulfide (CdSe / CdS) nanoparticles was spin-coated on PEDOT:PSS to obtain a luminescent layer with a thickness of 100 nm. Then transfer it to the vacuum coating system, wait until the vacuum degree reaches 1-5×10 -4 At Pascal, 200nm-thick metal Al was vapor-deposited on the light-emitting layer to prepare an infrared light with a structure of ITO / / PEDOT:PSS / / ADS830AT:CdSe / CdS:PVK (1:9:40, weight ratio) / / Al Organic electroluminescent devices. Wherein the evaporation rate...

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Abstract

The invention discloses a near-infrared organic electroluminescent material and device and making method, which is three-source copolymer of infrared fluorescent dye, II-VI semiconductor nanometer particle and conductive polymer, wherein the semiconductive nanometer particle is doped in the polymer through physical method, which is composited on the polymer through chemical method; the electroluminescent device is prepared by simple rotary-coating method; the device structure is ITO / / PEDOT:PSS / / polymer luminous layer / / metal cathode. The invention can launch center wavelength at 890 nm, which makes maximum luminous strength at 115nw.

Description

technical field [0001] The invention relates to a near-infrared organic electroluminescence material, a device and a preparation method of the device. Background technique [0002] Photonics has always been fundamental to driving the development of communication technology, but within a decade, existing technologies and devices will not be able to meet the requirements of future applications. In order to solve the above problems, countries all over the world are competing to develop new photonic materials and high-performance photonic devices to meet the requirements of ultra-fast and large-capacity information processing in the future. It is agreed that future optical components should have the characteristics of high integration and low processing cost . Recent advances in organic materials and related optoelectronic devices have demonstrated the potential of organic materials for low processing costs and multifunctionality required for communication applications due to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06H05B33/14
Inventor 马东阁宣宇游汉钱刚王植源
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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