Ring oscillator type digital pressure sensor and producing method thereof
A ring oscillator and pressure sensor technology, applied in the direction of measuring fluid pressure, measuring fluid pressure through electromagnetic components, instruments, etc., can solve the problems of difficult detection of small capacitance, complex temperature compensation, and temperature drift.
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[0026] The present invention is a ring oscillator type digital pressure sensor, and the present invention will be further elaborated below with reference to the accompanying drawings.
[0027] As shown in Figure 1 and Figure 2, under the action of stress 2, due to the piezoresistive effect of silicon, the channel resistance of the channel region 4 between the source 1 and the drain 3 of the silicon gate 5 of the MOS transistor will change. . This is mainly because the mobility of the carriers in the channel region 4 changes with the change of the stress 2 . The variation of carrier mobility with stress 2 is related to the type and crystallographic orientation of carriers. For a PMOS transistor with a (100) crystal plane, if the direction of the stress is along the crystal direction, then the source and drain are parallel to the crystal direction PMOS transistor (that is, the current direction between the source and drain and the crystal direction) The crystal orientation ...
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