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Method for verifying phase-shift angle of phase-shift photomask, photoengraving technology and phase-shift photomask

A technology of lithography process and phase shift angle, which is applied in the field of lithography, can solve the problems of time-consuming, quality reduction of lithography process, damage to the surface of photomask, etc., and achieve the effect of saving time

Active Publication Date: 2010-06-09
UNITED MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the method of using a proximity probe to measure the thickness of the substrate or film layer in various regions on the phase-shift photomask is not only time-consuming, but also may damage the surface of the photomask, resulting in a decrease in the quality of the photolithography process

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  • Method for verifying phase-shift angle of phase-shift photomask, photoengraving technology and phase-shift photomask
  • Method for verifying phase-shift angle of phase-shift photomask, photoengraving technology and phase-shift photomask
  • Method for verifying phase-shift angle of phase-shift photomask, photoengraving technology and phase-shift photomask

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Embodiment Construction

[0036] figure 1 A flowchart illustrating a method for inspecting a phase shift angle of a phase shift photomask of the present invention. Please refer to figure 1, first obtain a correction curve (step 100) corresponding to a process capability characteristic value of the phase shift angle of the specific type of phase-shift photomask to be used, wherein the type of phase-shift photomask is, for example, half-tone, alternating, none Chromium or any other type, the process capability characteristics are eg depth of focus, focus position or CD of photoresist pattern. For example, this calibration curve can be obtained by using a series of phase-shift photomask standard plates with known and different phase-shift angles to carry out the photolithography process, and then plotting the measured process capability characteristic value against the phase-shift angle, wherein each The phase shift angle of the phase shift photomask standard sheet can be accurately measured by the afor...

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Abstract

The present invention refers to method for checking phase shift type photomask phase displacement angle. It includes obtaining phase shift type photomask phase displacement angle corresponded technology ability eigenvalue correction curve, transferring checked phase shift type photomask pattern to one photoresist layer to form photoresist pattern, measuring above-mentioned technology ability eigenvalue, then according to above-mentioned correction curve, from said technology ability eigenvalue to calculate out said phase shift type photomask practical phase displacement angle for checking.

Description

technical field [0001] The present invention relates to the technique of lithography (Lithography), in particular to a method for testing the phase-shift angle (Phase-shift angle) of a phase-shift photomask (Phase Shift Mask, PSM), and using this method to adjust The photolithography process, and the structure of the phase-shift photomask. The phase shift angle of this kind of phase shift photomask can be known by this method. Background technique [0002] As the integration level of integrated circuits (ICs) becomes higher and higher, the linewidth of advanced semiconductor processes has mostly dropped below the wavelength of the exposure light source used. When the line width drops to about half of the wavelength of the exposure light source, it is necessary to use a phase-shift photomask for pattern transfer to improve resolution. Generally speaking, the phase-shift photomask uses the phase angle difference between adjacent light-transmissible regions to offset the ligh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/00G03F1/26G03F1/84
Inventor 郑永丰周岳霖林金隆
Owner UNITED MICROELECTRONICS CORP
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