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Photoelectric conversion device

A technology of photoelectric conversion device and conductive substrate, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problem of low short-circuit current density and other problems

Inactive Publication Date: 2006-11-01
NIPPON OIL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, on the other hand, there is still a problem in the photoelectric conversion device proposed by Tang et al., that is, the short-circuit current density of the device is very small

Method used

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Examples

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example 1

[0064] The dye-sensitized photoelectric conversion device according to the present invention is fabricated through the following steps. First, a titanium substrate having a size of 5×5 cm and a thickness of 1 mm was prepared, and an epoxy resin mask was coated on one surface of the substrate. The other surfaces were polished by electropolishing the titanium substrate using a mixed solution of methanol and sulfuric acid. After electropolishing, the surface profile of the substrate was observed by AFM (Atomic Force Microscope), and it was confirmed that the substrate had a very smooth surface structure. The roughness factor of the substrate surface was 1.04.

[0065] The titanium substrate was then anodized by applying a voltage of 10 V for 30 minutes in an electrolytic aqueous solution containing 0.5% by mass of hydrofluoric acid, thereby forming a titanium oxide thin film on the substrate. The electrolytic solution was set at a temperature of 16 °C.

[0066] The substrate w...

example 2

[0071] The dye-sensitized photoelectric conversion device according to the present invention is fabricated through the following steps. First, a titanium substrate having a size of 5×5 cm and a thickness of 1 mm was prepared, and an epoxy resin mask was coated on one surface of the substrate. The other surfaces are planarized by electropolishing the titanium substrate using a mixed solution of methanol and sulfuric acid. After electropolishing, the surface profile of the substrate was observed by AFM (Atomic Force Microscope), and it was confirmed that the substrate had a very smooth surface structure. The roughness factor of the substrate surface was 1.04.

[0072] The titanium substrate was then anodized by applying a voltage of 20 V for 20 minutes in an electrolytic aqueous solution containing 0.5% by mass of hydrofluoric acid, thereby forming a titanium oxide thin film on the substrate. The electrolytic solution was set at a temperature of 16 °C.

[0073] The substrate ...

example 3

[0078] The dye-sensitized photoelectric conversion device according to the present invention is fabricated through the following steps. First, an ITO glass substrate with a size of 5×5 cm and a thickness of 3 mm was prepared, and titanium with a thickness of 1000 nm was superimposed on the ITO glass substrate by vacuum deposition. The surface profile of titanium was observed by AFM (Atomic Force Microscope), and it was confirmed that titanium had a very smooth surface structure. The roughness factor of the titanium surface is 1.02.

[0079] The deposited titanium is then anodized by constant current electrolysis in an aqueous solution containing 1.5 mol / l sulfuric acid and 0.3 mol / l hydrogen peroxide until the generated voltage reaches 150 V, thereby forming an oxide on the substrate. Titanium film. The current density and the temperature of the electrolytic solution were set at 30mA / cm 2 and 16°C. The thin film obtained in this way was a de-titanium type crystal, and had ...

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Abstract

The present invention provide an all solid-state photoelectric conversion device which comprises a semiconductor, an electrically conductive substrate arranged on one surface of the semiconductor and forming an ohmic junction therewith, an electrically conductive film arranged on the other surrface and forming a Schottky junction with the semiconductor, and a sensitizing dye layer arranged on the electrically conductive film, the roughness factor of the surface of the semiconductor forming a Schottky junction being 5 or greater. The photoelectric conversion device has a large effective surface area and a high durability and can be manufactured at a low cost.

Description

[technical field] [0001] The present invention relates to novel photoelectric conversion devices using dye-sensitized semiconductors. [Background technique] [0002] The dye-sensitized solar cell demonstrated by Gratzel et al. in 1991 is a wet solar cell. The working electrode of this cell is formed by a porous titanium oxide film that is spectrally sensitized by a ruthenium complex, and has the same properties as silicon solar cells. Battery-like performance (see Non-Patent Document 1 below). The advantage of the method adopted by Gratzel et al. is that the production cost of the photoelectric conversion device is not high, because cheap metal oxide semiconductors such as titanium oxide can be used without being purified to a certain high purity, and Due to its broad dye absorption, the resulting device is capable of converting light into electricity in essentially the entire visible wavelength region. However, on the other hand, this type of photoelectric conversion devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01M14/00
CPCH01L31/0392H01L31/07H01L31/18Y02E10/542Y02E10/549Y02P70/50H01G9/2031H10K30/151
Inventor 中山庆祐锦谷祯范
Owner NIPPON OIL CO LTD
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