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Headlamp

A technology for headlamps and nitride semiconductors, which is applied in the direction of headlamps, lighting and heating equipment, fixed lighting devices, etc., can solve the problems of limited output, decreased light emission output, inability to stimulate multiple quantum well light emission, etc., and achieves the production cost. reduced effect

Inactive Publication Date: 2006-06-14
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the light emission of the entire MQW cannot be excited, and the light emission output decreases
In addition, the resistance increases, and at the same time it causes problems in heat generation and power supply capacity.
In addition, if the p-type GaN layer is made relatively thick in order to allow the current to flow uniformly through the entire p-type GaN layer, the light absorption of the p-type GaN layer increases, limiting the output

Method used

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Examples

Experimental program
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Effect test

no. 1 approach

[0086] figure 1 It is a simplified schematic diagram showing a vehicle equipped with the vehicle headlight of the present invention. figure 2 is installed in the figure 1 Simplified cutaway schematic of a headlight on the vehicle shown. The following will refer to figure 1 and 2 The headlamp of the present invention is described.

[0087] Such as figure 1 As shown, a headlight 82 as a first embodiment of the present invention is disposed at the front of a vehicle body of a vehicle 80 . When the vehicle 80 is running at night or in a tunnel, the headlights 82 emit light to illuminate the front of the vehicle 80 .

[0088] Such as figure 2 As shown, the headlight 82 is equipped with two LEDs 84 which are arranged on top of the base 86 , the headlight 82 is also equipped with a rear cover 92 and a light glass 88 which form a housing for holding the base 86 . Inside the casing formed by the rear cover 92 and the lamp glass 88 are an inner reflector 94 placed under the ...

no. 1 example

[0091] First, the LED according to the above-mentioned present invention was mounted on the headlight 82 as a light emitting device, and the GaN substrate was a nitride semiconductor substrate used in the LED 84, and this GaN substrate was compared with a sapphire substrate. image 3 The above shows a schematic diagram of the LED of the inventive sample A used in the headlight of the first embodiment of the present invention. On the first main surface of GaN substrate 1 are formed a P-electrode 12 and a layered structure including a light emitting layer, which will be described later, and the like. In this embodiment, the P-electrode 12 is mounted downwardly on the lead frame mounting part 21a by using the conductive adhesive 14 .

[0092] Second main surface 1a of GaN substrate 1 is a surface that emits light from the light emitting layer, and n-electrode 11 is provided on this surface. The n-electrode 11 does not cover the entire second main surface. It is important that m...

no. 2 example

[0125] In the second embodiment of the present invention, an inventive sample C having an enlarged area will be described. The structure of this inventive sample C is the same as image 3 Inventive Sample A shown has the same structure. However, the linear dimension L1 in Invention Sample A is 0.3 mm (300 micrometers), while in Invention Sample C it is 10 times larger to 3 mm, so its area is increased by 100 times, as Figure 13 shown. First, the method of producing Invention Sample C is as follows.

[0126] (Invention Sample C)

[0127] (c1)-(c5) Execute exactly the same corresponding steps as Inventive Sample A, but with a large GaN substrate.

[0128] (c6) On the second main surface on the GaN substrate surface side, n-electrodes having a diameter of 100 microns were formed at intervals of 3.1 mm by photolithography, evaporation and lift-off. As an n-electrode, a layered structure (20nm Ti layer / 100nm Al layer / 20nm Ti layer / 200nm Au layer) was formed in contact with th...

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Abstract

A vehicle headlight is equipped with a light source comprising one or more light emitting devices (LEDs), and base parts (base and rear cover) for fastening the light source to the vehicle. The light emitting device includes: a GaN substrate 1; an n-type AlxGa1-xN layer 3 on the first main surface side of the GaN substrate 1; located farther from the n-type AlxGa1-xN layer 3 p-type AlxGa1-xN layer 5 of GaN substrate 1; and multiple quantum wells 4 located between said n-type AlxGa1-xN layer 3 and p-type AlxGa1-xN layer 5. In this light-emitting device, the resistivity of the GaN substrate 1 is not greater than 0.5Ω·cm, the side of the p-type AlxGa1-xN layer 5 is installed facing downward, and light is emitted from the second main surface 1a, and the first The second main surface is a main surface of the GaN substrate 1 opposite to the first main surface.

Description

technical field [0001] The present invention relates to a light emitting device, in particular, to a light emitting device for a vehicle equipped with a light source including a light emitting device formed of a nitride substrate. The light emitting device in the present invention may refer to the case of a semiconductor element formed of a nitride semiconductor substrate and a semiconductor layer stacked thereon, or it may refer solely to a semiconductor chip placed in a mounting portion and sealed in a resin The situation of the device. Additionally, the term can be used to refer to both. In addition, a semiconductor chip may be simply called a "chip". In addition, a substrate in a chip and an epitaxial layer formed thereon may be simply referred to as a "substrate". Background technique [0002] Recently, white light emitting diodes (LEDs) are widely used for lighting and portable electronic devices such as portable information terminals. There is however potential th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B60Q1/04F21S8/10F21W101/10F21Y101/02H01L33/06H01L33/32H01L33/50
CPCH01L33/32H01L2224/32257H01L2224/16245H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/8592H01L2224/14H01L2224/45139H01L2224/45144H01L2224/05573H01L2224/05568H01L2924/00014H01L2224/73265F21Y2115/10F21S41/143F21S41/155H01L2224/0554F21S41/151H01L2224/45015H01L2924/00011H01L2924/00H01L2224/05599H01L2224/0555H01L2224/0556H01L2924/00012H01L2924/20752H01L2924/2076H01L2924/01049B60Q9/00
Inventor 永井阳一中村孝夫片山浩二
Owner SUMITOMO ELECTRIC IND LTD
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