III-nitride semiconductor element and manufacturing method thereof

Abstract

Disclosed a structure of III group nitride semi-conductor device and its manufacturing method comprises a stress release layer formed by an amorphous silicon nitride layer, a metal aluminous medium layer, an amorphous nitride aluminous preposition layer and a multiple-crystal III group nitride layer containing aluminous element, is arranged between the silicon base plate and the III group nitride semi-conductor, for releasing the stress caused by the difference of lattice parameters and the coefficients of thermal expansion between the III group nitride material and the silicon base plate, which also can avoid the breakage caused by the stress.

Description

technical field [0001] The present invention relates to a III-nitride semiconductor element and its manufacturing method, in particular to a stress-relieving layer located between the silicon substrate and the III-nitride semiconductor to relieve the gap between the III-nitride material and the silicon substrate A III-nitride semiconductor element and a manufacturing method thereof that avoid cracking of the III-nitride semiconductor due to the stress generated by differences in lattice constants and thermal expansion coefficients. Background technique [0002] The growth methods used to deposit high-quality GaN compound thin films can generally be distinguished into two groups of methods. The first group is a method including a metalorganic chemical vapor deposition (MOCVD) method or a plasma accelerated MOCVD method as a modification of MOCVD. All methods in this group are characterized by the use of a representative reactor pressure of 10-1030 hPa and a high-quality GaN ...

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Problems solved by technology

Third, since sapphire is an insulator, electrodes cannot be formed on the back side of the substrate, and the manufacturing method for forming electrodes is more expensive

Fourth, the thermal expansion coefficient of sapphire is very different from that of GaN, so the growth and manufacturing method is more complicated

Fifth, sapphire has a Uzbekissic crystal structure, so there will be other problems in the manufacture of laser components

This structure solves the problems caused by the high price of the substrate and the use of the sapphire substrate because of the use of the Si substrate, but first, GaN cannot successfully form a single crystal GaN layer on the Si substrate, and most of them form hexagonal pyramidal GaN crystals Second, GaN and silicon substrates cause stress due to differences in material lattice constants and thermal expansion coefficients. This stress accumulation will cause cracks in the GaN epitaxial layer, such as Image 6 As shown, the components cannot be manufactured, so the interface between GaN and Si becomes the most important part of the quality of the epitaxial chip

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