Gallium nitride based LED chip and its manufacturing method

Abstract

The invention discloses a gallium nitride light-emitting diode and its manufacturing method. Wherein, the light-emitting active region 3, P contact layer 4, P contact electrode 6 discrete array are arranged on the N contact layer 2; the N contact electrode 7 is arranged as net structure; by face-down bonding technique and the welded material protruded block 13 of tube corn supporter, the P electrode thickened metallic layer 9 is connected to the contact electrode layer 12 of P region and the N electrode thickened reflective metallic layer 14 is connected to the contact electrode layer 15 of N region; the contact electrode layer 12 of P region and the contact electrode layer 15 of N region are arranged on the isolated layer 11 which is over the substrate 10 of tube corn supporter. First, processing the epitaxial sheet of gallium nitride light-emitting diode into the body of tube corn; then, forming the tube corn supporter on the substrate of tube corn supporter; at last, connecting the body of tube corn with the tube corn supporter by the technique of face-down bonding. Said invention can improve the luminous efficiency, the diffusion of current, and increase the heat conductance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, in particular to a product of a gallium nitride-based light-emitting diode chip and a manufacturing method thereof. Background technique [0002] Gallium nitride (GaN)-based compound semiconductors and their quantum well structure light-emitting diodes (LEDs) have the advantages of high reliability, high efficiency, long life, full solidification, and low power consumption. There is a huge application market in the field of general light display and indication, especially the combination of gallium nitride-based purple or blue light-emitting diodes and phosphors can be made into white light diodes, which has a potential application market in the lighting field and is expected to replace the current incandescent lamps in the future And fluorescent lamps, become the green lighting source in the 21st century. The P-type contact electrode of the gallium nitride-based light-emit...

AI Technical Summary

Problems solved by technology

The P-type contact electrode of the gallium nitride-based light-emitting diode chip generally used today is a whole. When the chip area is large, even if a more advanced comb-shaped electrode is used, the current diffusion performance is not good. In the P-type area and the N The place where the type area is close to is prone to the current concentration effect, which affects the increase of the working current density of the chip. In addition, the sapphire substrate of the gallium nitride-based light-emitting diode chip has poor thermal conductivity, which makes it difficult to transfer the heat generated when the chip is working. When the power increases, the temperature of the chip will rise, which will affect the reliability and life of the chip

At the same time, when the chip area is large, the P-type contact electrodes connected as a whole will also cause the so-called "waveguide effect", which will limit the light generated by the light-emitting active area to the chip, reducing the light output efficiency of the chip

[0003] In the prior art, the light-emitting active region, the P-type contact layer, and the P-type contact electrode of the gallium nitride-based light-emitting diode chip are all integrated, which does not involve the structure and structure of the corresponding array flip-chip gallium nitride-based light-emitting diode chip. Manufacturing method

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