Raster polarization photomask plate and its application in projection photoetching system

Abstract

The grating polarization mask plate belongs to a farther optimization design of mask plate structure in projection optical photoetching system. It is characterized by that according to the characteristic line width of characteristic pattern on the mask plate, on the mask characteristic pattern etching a grating polarization structure with a certain width and depth, making grating structure for producing polarization light and traditional mask plate be combined into one body, and making the mask plate self-body have the function of outputting polarization light, and utilizing grating polarization mask to control the vector direction of electric field vector so as to control space coherent of electric field to attain the goal of raising resolution. Said invention also provides the application range of said projection photoetching equipment.

Description

Technical field [0001] The invention is a grating polarization mask, which belongs to the further optimized design of the mask structure in the step-and-repeat projection optical lithography system and the step-and-scan projection optical lithography system. Background technique [0002] With the development of modern microelectronics technology in the direction of high-integration ultra-micronization, the continuous improvement of the lithography resolution level that can be achieved by the projection lithography equipment for producing fine graphics has become the core problem that modern lithography technology urgently needs to solve. Since the "next generation" lithography technology (such as EUV lithography, electron beam projection lithography, X-ray lithography, etc.) is still in the research stage, and its technology, equipment and processes are very expensive, coupled with optical lithography Therefore, the research, development and application of lithographic resol...

AI Technical Summary

Problems solved by technology

The application of phase-shift mask technology improves the resolution to some extent, but with the reduction of the basic period of the lithography line, the increase of the numerical aperture of the projection lithography objective lens, the shortening of the exposure wavelength, and the polarization-based vector diffraction The influence of the photolithography effect on the lithographic pattern is increasing, and the phase shift mask cannot guarantee high-quality imaging; and the design and position of the optimal phase shifter are difficult to place, and the manufacturing cost is high. The above-mentioned deficiencies are difficult to meet the needs

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