Semiconductor device having trench isolation
A trench isolation, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of deterioration of the reliability of the gate insulating layer, difficulty in manufacturing high-performance transistors or flash memory, etc., to prevent reliability. worsening effect
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Embodiment 1
[0031] Such as figure 1 As shown, the semiconductor device of this embodiment is provided with a trench isolation portion for electrically isolating a semiconductor element from other semiconductor elements. The trench isolation portion includes, for example, a trench 2 for trench isolation formed on the surface of a semiconductor substrate 1 made of silicon, and a buried insulating layer 3 filling the trench 2 . The buried insulating layer 3 fills the trench 2 and protrudes from the surface of the semiconductor substrate 1 . The protruding portion has an overhanging portion protruding outward (in a direction parallel to the surface of the semiconductor substrate) from a region immediately above the groove 2 on the surface of the semiconductor substrate 1 . The overhanging portion has a structure in which at least two insulating layers are laminated. Furthermore, the entire upper surface of the buried insulating layer 3 is located above the surface of the semiconductor subst...
Embodiment 2
[0037] refer to figure 1 , in the semiconductor device of this embodiment, the insulating layer 3b constituting the overhang 2 and insulating layer 3c are made of different silicon oxide films. insulating layer 3b 2It consists of a silicon oxide film (hereinafter referred to as a thermal oxide film) formed by a thermal oxidation method. The insulating layer 3c is made of a silicon oxide film formed by a method other than thermal oxidation, for example, a silicon oxide film formed by HDP (High Density Plasma: High Density Plasma) (hereinafter referred to as an HDP oxide film), or a silicon oxide film formed by TEOS ( Tetra Ethyl Ortho Silicate: a silicon oxide film formed of Tetra Ethyl Ortho Silicate (hereinafter referred to as a TEOS oxide film) and the like. Therefore, the insulating layer 3b and the insulating layer 3c have mutually different film qualities.
[0038] In addition, the insulating layer 3a is made of, for example, an HDP oxide film, and the insulating laye...
Embodiment 3
[0044] refer to figure 2 , compared with the structure of Embodiment 2, the difference of the structure of this embodiment is that the insulating layer 3b constituting the overhang of the buried insulating layer 3 2 and the insulating layer 3d are made of different materials from each other. insulating layer 3b 2 It is made of a thermal oxide film, and the insulating layer 3d is made of a silicon nitride film.
[0045] Since the insulating layer 3a is made of a silicon oxide film, the insulating layer 3a and the insulating layer 3d are made of different materials.
[0046] In addition, the structure other than that in this embodiment is substantially the same as that of the above-mentioned embodiment 2, and therefore the same components are denoted by the same reference numerals, and description thereof will be omitted.
[0047] According to this embodiment, since the insulating layer 3d is made of a silicon nitride film, the insulating layer 3b is removed by wet etching w...
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