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Gas-phase doping-area fused silicon monocrystal production method

A gas-phase doping and production method technology, which is applied in the directions of single crystal growth, self-region melting method, crystal growth, etc., can solve the problems of thermal instability and reversibility of resistivity, long production cycle and high production cost, and achieve shortening The production cycle, the elimination of intermediate damage, and the effect of reducing the production process

Inactive Publication Date: 2003-11-12
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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AI Technical Summary

Problems solved by technology

The silicon single crystal produced by it, or the thermal instability and reversibility of the resistivity caused by the high oxygen content, caused the limitations of the Czochralski silicon single crystal in the manufacturing process of power devices.
Although the silicon single crystal produced by the zone melting method can reduce the oxygen content, the single crystal can only be doped by neutron irradiation, which leads to long production cycle and high production cost.

Method used

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  • Gas-phase doping-area fused silicon monocrystal production method
  • Gas-phase doping-area fused silicon monocrystal production method

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Embodiment Construction

[0007] Provide examples below to further illustrate how the present invention is realized.

[0008] 1. The main equipment and raw materials of this embodiment are as follows:

[0009] Zone Furnace: Model: FZ-14-1, FZ-30; Doping Controller: Model: 0154E

[0010] Polysilicon: primary material: base boron ≥ 9000Ω·cm base phosphorus ≥ 900Ω·cm

[0011] CFZ material: base boron≥600Ω·cm, base phosphorus≥400Ω·cm

[0012] High-purity argon: Dew point: -70°C Purity: >99.9993% Oxygen content ≤1PPma

[0013] Hydrofluoric acid: high grade pure

[0014] Nitric acid: high grade pure

[0015] Phosphine: Purity: 99.999%

[0016] Seed crystal: For the inspection standard, please refer to "Silicon Wafer Inspection Operation Procedures"

[0017] 2. The main raw material consumption quota of this embodiment:

[0018] It takes consumption to pull 1kgΦ3″ qualified single crystal for one crystal formation (take ASIMI material as an example)

[0019] Polysilicon: 1.6kg; Hydrofluoric ac...

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Abstract

The gas phase doping zone molten-silicon monocrystal production method includes the following steps: (1) charging and vacuum-pumping; (2). preheating silicon rod; (3) melting material; (4) doping, setting gap flow control parameter on the doping gas control device; (5), joining seed crystal by fusion; (6) leading crystal; (7) growing thin nack; (8) shouldering; (9) isodiametric growing; (10) ending and draw-breaking; (11) stopping gas; and (12) stopping furnace and removing furnace. Said invention saves the neutron radiation doping process so as to shorten production period and reduce production cost, and reduce production procedure.

Description

technical field [0001] The invention relates to a production method of silicon single crystal, in particular to a production method of molten silicon single crystal in gaseous phase doping region. Background technique [0002] At present, almost all silicon single crystals are produced by the Czochralski method or the zone melting method. The silicon single crystal produced by it may cause thermal instability and reversibility of resistivity due to high oxygen content, resulting in the limitation of Czochralski silicon single crystal in the manufacturing process of power devices. Although the silicon single crystal produced by the zone melting method can reduce the oxygen content, the single crystal can only be doped by neutron irradiation, which leads to long production cycle and high production cost. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for producing a silicon single crystal in a gas-phase ...

Claims

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Application Information

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IPC IPC(8): C30B13/12
Inventor 沈浩平刘为刚昝兴利郭丽华李颖辉高树良
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD
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