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Process for preparing titanium carbonitride ceramic powder body by utilizing plasma chemial gas phase synthesis method

A titanium carbonitride ceramic and plasma technology is applied in the field of preparing nano-scale and sub-micron titanium carbonitride ceramic powders, which can solve the problem of complex process, easy doping, and inability to meet high-quality titanium carbonitride ceramic products. and other problems, to achieve the effect of uniform particle size distribution and high purity

Inactive Publication Date: 2003-09-24
白万杰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The titanium carbonitride powder produced by these methods has a large primary crystal size, and needs to be further ground when used, the process is complicated, and it is easy to be doped during the grinding process, which affects the quality of the product and cannot meet the requirements of high-quality titanium carbonitride ceramic products. requirements

Method used

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  • Process for preparing titanium carbonitride ceramic powder body by utilizing plasma chemial gas phase synthesis method
  • Process for preparing titanium carbonitride ceramic powder body by utilizing plasma chemial gas phase synthesis method

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Embodiment 1

[0018] Embodiment 1: A kind of process of preparing titanium carbonitride ceramic powder by plasma chemical vapor phase synthesis, it is characterized in that at first pass into plasma working gas N in the plasma generator 2 -H 2 -Ar, press N 2 9m 3 / h; H 2 27m 3 The flow rate of / h is continuously injected, and 30 liters / min of Ar is injected, the plasma power supply is started, and a plasma arc is generated in the plasma generator, (the Ar gas is turned off after the arc starts normally). The gas after the arc is heated to a high temperature of 4800°C and then enters the reactor, and then the TiCl evaporated by the evaporator is respectively 4 And the liquefied gas and NH delivered by the flowmeter 3 Send it into the reactor to decompose quickly, and keep the liquefied gas and NH 3 and TiCl 4 The ratio is 1:1:7 (injection liquid weight ratio per unit time) continuous injection, and the reaction temperature in the plasma reactor is kept at 1200°C. Decomposition occurs...

Embodiment 2

[0028] Embodiment 2: A kind of process of preparing titanium carbonitride ceramic powder by plasma chemical vapor phase synthesis method, it is characterized in that at first passing into plasma working gas N in the plasma generator 2 -H 2 -Ar, press N 2 11m 3 / h; H 2 30m 3 The flow rate of / h is continuously injected, and 30 liters / min of Ar is injected, the plasma power supply is started, and a plasma arc is generated in the plasma generator, (the Ar gas is turned off after the arc starts normally). The gas after the arc is heated to a high temperature of 5000°C and enters the reactor, and then the TiCl evaporated by the evaporator is separately 4 And the liquefied gas and NH delivered by the flowmeter 3 Send it into the reactor to decompose quickly, and keep the liquefied gas and NH 3 and TiCl 4 The ratio is 1:1:9 (injection liquid weight ratio per unit time) for continuous injection, and the reaction temperature in the plasma reactor is kept at 1250°C. Decompositio...

Embodiment 3

[0038] Embodiment 3: A kind of process of preparing titanium carbonitride ceramic powder by plasma chemical vapor synthesis method, it is characterized in that at first pass into plasma working gas N in the plasma generator 2 -H 2 -Ar, press N 2 13m 3 / h; H 2 32m 3 The flow rate of / h is continuously injected, and 30 liters / min of Ar is injected, the plasma power supply is started, and a plasma arc is generated in the plasma generator, (the Ar gas is turned off after the arc starts normally). The gas after the arc is heated to a high temperature of 5200°C and then enters the reactor, and then the TiCl evaporated by the evaporator is respectively 4 And the liquefied gas and NH delivered by the flowmeter 3 Send it into the reactor to decompose quickly, and keep the liquefied gas and NH 3 and TiCl 4The ratio is 1:1:11 (injection liquid weight ratio per unit time) for continuous injection, and the reaction temperature in the plasma reactor is maintained at 1300°C. Decompos...

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Abstract

The process for preparing titanium carbonitride ceramic powder body by using plasma chemical gas-phase synthesis method is characterized by utilizing the D.C. electric arc plasma as heat source, heating the gas N2-H2-Ar flowing through electric arc to high temp. of 4800-5200 deg.C and feeding said gas and liquefied gas heating-evaporated by evaporator, TiCl4 and NH3 gases into plasma reactor together to make them quickly produced decomposition and synthesis reaction of titanium carbonitride, and making the TiCN formed at 1200-1300 deg.c in reactor undergo the processes of crystallization, growth, cooling and gas-solid separation so as to obtain the invented nano-grade titanium carbonitride ceramic powder body.

Description

technical field [0001] The invention relates to a process for preparing nanometer and submicron titanium carbonitride ceramic powders by using liquefied gas and plasma chemical vapor phase synthesis. technical background [0002] Titanium carbonitride ultra-fine ceramic powder is the most widely used cermet material, because it has a series of advantages such as oxidation resistance, corrosion resistance, high temperature resistance, etc., it is widely used in the manufacture of cutting tools and molds, superhard materials and tools and other industries. Compared with WC cemented carbide, titanium carbonitride-based cermets show higher red hardness, high strength, high thermal conductivity and lower friction coefficient during processing. It has a higher life or a higher cutting speed can be used under the same life, and the workpiece has a better surface finish. It is an ideal material to replace WC cemented carbide in the field of tool manufacturing. At present, the tit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/56C04B35/58C04B35/622
Inventor 白万杰
Owner 白万杰
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