Blue light emitting device of III group nitrogen semi-conductor

Abstract

The invention relates to the blue light-emitting device of III group nitrogen semi-conductor. Clads on the two sides of the active area includes at least one strained layer superlattice structure. Comparing with general AIGaN clad, the structure can eliminate the defect caused by the mismatch between GaN and the crystal lattice of the substrate so as to improve the crystal perfection and confine carriers in the active area effectively and uniformly. Thus, the combined luminous efficiency and the uniformity are raised.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a group III nitride semiconductor blue light-emitting device. Background technique [0002] For optoelectronic devices such as light-emitting diodes and semiconductor lasers, it is required that the injected electrons (n-type carriers) and holes (p-type carriers) can be confined to the active layer (active layer), where they recombine and emit light. . On both sides of the active region, a semiconductor material with a larger forbidden band width than the active layer is used to form a barrier layer, and according to the difference in doping, the confinement of electrons and holes can be achieved respectively. For cladding materials, not only the ability to form an appropriate barrier height must be considered. It is also necessary to consider whether it can lattice match with the semiconductor layers and active layers on both sides, otherwise it will destroy the structure and performa...

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Problems solved by technology

However, due to the very large lattice mismatch between sapphire (a=4.758) and GaN (a=3.189), the epitaxial layer has a large defect density and low mobility

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