Manufacture of tunnel oxide layer

Abstract

In the manufacture of tunnel oxide layer, the present invention adopts rapid thermal process to replace available furnace process and grow SiO92 film as tunnel oxide layer through rapid thermal oxidation of monocrystal chip. The tunnel oxide layer is in-situ annealed in the repid thermal annealing process resulting in improved tunnel oxide layer quality. The present invention can reduce the growth time of the tunnel oxide layer, lower the required thermal budget, raise the homogenity of the tunnel oxide layer, and avoid pollution and manpower caused by replacing reactor chamber.

Description

technical field [0001] The present invention relates to a kind of manufacture method of tunnel oxide layer (Tunnel Oxide), relate in particular to a kind of utilizing Rapid Thermal Oxidation (Rapid Thermal Oxidation; RTO), and carry out rapid thermal annealing (Rapid Thermal Oxidation; RTO) in situ (In-Situ) mode Thermal Annealing; RTA) to create a tunnel oxide layer method. Background technique [0002] Depending on the difference in access function, the memory can be roughly divided into two categories: random access memory (Random Access Memory; RAM) and read only memory (Read Only Memory; ROM). Among them, random access memory needs continuous power supply to retain the stored data, so it is called volatile (Volatile) memory, and the data stored in read-only memory will not be lost due to interruption of power supply, so it is called It is a non-volatile (Nonvolatile) memory. In addition, read-only memory is divided into mask read-only memory (Mask Read Only Memory; MR...

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Problems solved by technology

[0011] Although the silicon dioxide film can be grown and annealed by thermal oxidation in a furnace tube process, hundreds of substrates can be processed at one time, but the required manufacturing time is quite long, about several hours, which not only leads to a decrease in production efficiency , and the thermal budget (Thermal Budget) required by the process is also quite high, resulting in an increase in manufacturing costs

[0012] In view of the above-mentioned existing tunnel oxide layer manufacturing methods, when the furnace tube process is used to form and anneal the silicon dioxide film as the tunnel oxide layer, the required manufacturing time is too long, which reduces the manufacturing efficiency and the thermal budget of the process Too high, resulting in increased manufacturing costs

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