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Method of fabricating an oxide layer on a silicon carbide layer utilizing NO2

A technology of oxide layer and silicon carbide layer, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problem of interface state density reduction and other issues

Inactive Publication Date: 2007-04-18
CREE INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, even with O 2 annealing, Lai et al. also did not see the interface state density is not related to the N 2 Compared to the case of nitriding in O, there is no significant reduction in

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  • Method of fabricating an oxide layer on a silicon carbide layer utilizing NO2
  • Method of fabricating an oxide layer on a silicon carbide layer utilizing NO2
  • Method of fabricating an oxide layer on a silicon carbide layer utilizing NO2

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Embodiment Construction

[0044] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the illustrated embodiments; these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.

[0045] Embodiments of the present invention pr...

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Abstract

Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer by at least one of oxidizing the silicon carbide layer in an N2O environment or annealing an oxide layer on the silicon carbide layer in an N2O environment. Preferably, a predetermined temperature profile and a predetermined flow rate profile of N2O are providing during the oxidation or the anneal. The predetermined temperature profile and / or predetermined flow rate profile may be constant or variable and may include ramps to steady state conditions. The predetermined temperature profile and / or the predetermined flow rate profile are selected so as to reduce interface states of the oxide / silicon carbide interface with energies near the conduction band of SiC.

Description

[0001] related application [0002] This application claims the patent application entitled "N Oxide Layers on Silicon Carbide Layers," filed May 30, 2001. 2 U.S. Provisional Application Serial No. 60 / 294,307, "O growth method," also filed on April 12, 2001, entitled "N 2 A continuation-in-part of, and claiming priority from, U.S. Provisional Patent Application Serial No. 09 / 834,283 of O Annealing Method, which claims "Improving Silicon Carbide Methods of Interface Between Layers and Oxide Layers," U.S. Provisional Application Serial No. 60 / 237,822 and Serial No. 60 / 237,426 entitled "SiC Power Metal Oxide Field Effect Transistor (MOSFET) and Method of Fabrication" The priority of the U.S. provisional application of .The disclosure of the above application is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to the fabrication of semiconductor devices, and in particular the invention relates to the fabrication of oxide la...

Claims

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Application Information

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IPC IPC(8): H01L21/316H01L21/469H01L27/04H01L29/24H01L21/04H01L29/78
CPCH01L29/7827H01L29/7838H01L21/049H01L29/7802H01L29/1608H01L21/02115H01L21/02164H01L21/02554H01L21/324
Inventor L·利普金M·K·达斯J·W·帕尔穆尔
Owner CREE INC
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