Method for growing p type zinc oxide crystal film by real-time nitrogen doping
A zinc oxide, p-type technology, used in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve the problem of low industrial value and achieve good repeatability and stability.
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[0018] The present invention is further described below in conjunction with specific examples.
[0019] First put the silicon wafer substrate on the sample holder 7 of the growth chamber 2 after surface cleaning, then close each air inlet, and vacuumize to 10 -4 pa, the substrate is heated by the substrate heater 8 so that its temperature reaches 450°C, and the organic zinc source carrier gas inlet pipe 3 and the oxygen source gas inlet pipe 5 will respectively contain high-purity (more than 99.999%) diethyl zinc Nitrogen, high purity (above 99.999%) N 2 O is passed into the growth chamber 2, so that diethylzinc and N 2 The molar flow rate of O is 10 μmol / min and 2000 μmol / min respectively, and the pressure in the growth chamber is controlled at 1Pa. At the same time, high-purity (more than 99.999%) nitrogen source gas—nitrogen is passed into the radio frequency atom generator 1 from the inlet pipe 4, and the nitrogen flow rate Be 2sccm, produce nitrogen atom by the effect o...
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