Method for growing p type zinc oxide crystal film by real-time nitrogen doping

A zinc oxide, p-type technology, used in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve the problem of low industrial value and achieve good repeatability and stability.

Inactive Publication Date: 2006-06-07
ZHEJIANG UNIV
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Problems solved by technology

The specific zinc oxide thin film preparation methods used are limited to methods such as molecular beam epitaxy, laser pulse deposition, magnetron sputtering and diffusion, and these methods have low industrial application value due to the quality of materials, preparation costs and other reasons

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  • Method for growing p type zinc oxide crystal film by real-time nitrogen doping

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Embodiment Construction

[0018] The present invention is further described below in conjunction with specific examples.

[0019] First put the silicon wafer substrate on the sample holder 7 of the growth chamber 2 after surface cleaning, then close each air inlet, and vacuumize to 10 -4 pa, the substrate is heated by the substrate heater 8 so that its temperature reaches 450°C, and the organic zinc source carrier gas inlet pipe 3 and the oxygen source gas inlet pipe 5 will respectively contain high-purity (more than 99.999%) diethyl zinc Nitrogen, high purity (above 99.999%) N 2 O is passed into the growth chamber 2, so that diethylzinc and N 2 The molar flow rate of O is 10 μmol / min and 2000 μmol / min respectively, and the pressure in the growth chamber is controlled at 1Pa. At the same time, high-purity (more than 99.999%) nitrogen source gas—nitrogen is passed into the radio frequency atom generator 1 from the inlet pipe 4, and the nitrogen flow rate Be 2sccm, produce nitrogen atom by the effect o...

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Abstract

The method for growing p-type zinc oxide crystal thin film by doping nitrogen in real time disclosed by the present invention uses activated cracking high-purity nitrogen source gas to generate nitrogen atoms in the metal organic chemical vapor deposition process for real-time doping nitrogen. The steps are as follows: first clean the surface of the substrate and put it into the metal organic chemical vapor deposition growth chamber, and the vacuum degree of the growth chamber is pumped to at least 10 -4 Pa, then heat the substrate so that the substrate temperature is 350-950°C, input the high-purity oxygen source and the high-purity organic zinc source into the growth chamber with high-purity carrier gas to grow zinc oxide film on the substrate, the high-purity oxygen source and the high-purity carrier gas The molar flow rate of the high-purity organic zinc source is 5-100000 μmol / min and 0.1-1000 μmol / min respectively, and at the same time, the nitrogen atoms separated from the high-purity nitrogen source gas by activation and cracking of the atom generator are input into the growth chamber, and the internal pressure of the growth chamber is controlled at 10 -2 ~100Pa, the preparation nitrogen doping concentration is 1.0×10 15 cm -3 ~1.0×10 19 cm -3 p-type zinc oxide crystal thin film. By adopting the invention, real-time doping can be realized, and a p-type zinc oxide thin film with better crystal quality and higher doping concentration can be grown.

Description

technical field [0001] The invention relates to a doping method for a p-type zinc oxide crystal thin film. Specifically, it relates to a method for growing a p-type zinc oxide crystal film by doping nitrogen in real time during metal organic chemical vapor deposition process of zinc oxide crystal film. Background technique [0002] As an important wide-bandgap semiconductor material, zinc oxide has great application prospects in the field of optoelectronics. However, in order to realize the application of ZnO-based devices, it is necessary to grow controllable n-type and p-type ZnO crystal thin films with a certain carrier concentration. At present, research on n-type zinc oxide crystal thin films has been relatively sufficient, and real-time, concentration-controllable growth of low-resistance n-type zinc oxide crystal thin films has been achieved. However, in order to prepare a light-emitting device from a zinc oxide crystal thin film, a zinc oxid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/40
Inventor 叶志镇徐伟中赵炳辉朱丽萍黄靖云
Owner ZHEJIANG UNIV
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