Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film

A technology of hot wire chemistry and superconducting thin film, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., and can solve the difficult problem of containing MgO impurities in the film

Inactive Publication Date: 2004-09-29
YANSHAN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently reported MgB 2 The preparation of superconducting thin films mainly adopts the ex-situ method of annealing in Mg vapor after deposition.
Few research groups have reported the in-situ preparation of the thin film. They used physical deposition methods such as pulsed laser deposition, molecular beam epitaxy and sputtering, but the obtained thin film T c T c The value is much lower, and these methods are difficult to solve the problem of MgO impurity phase in the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film
  • In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0007] figure 1 An embodiment disclosed for the present invention (see figure 1 ), the invention uses a gaseous compound containing B and Mg as the reaction gas, so that it is cracked under the action of the hot wire 4, and the reaction generates MgB 2 compound and grow into a thin film on the substrate 6.

[0008] In the present invention, due to the easy oxidation of Mg strips, MgO generally exists on the surface of Mg solids, but it has a melting point much higher than Mg, so it is difficult to evaporate and deposit on the substrate, thereby ensuring the evaporation of pure Mg and inhibiting MgO was formed in the film. However, for currently reported physical methods, such as pulsed laser evaporation deposition and sputtering methods, due to the MgB 2 The target sintering process will inevitably form MgO impurities, so the MgO impurities in the target will inevitably be mixed with MgB 2 At the same time, it is evaporated or sputtered out to form an impurity phase in the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A superconductor MgB2 film is prepared by in-situ hot-wire chemical gas-phase deposition method, which is characterized by that the gas-state compound containing B and Mg takes part in splitting reaction under the action of hot wire to generate MgB2 compound, which is growing on substrate to become film. Said superconductor film has features of no MgO phase in it and 35K of zero resistance change temp.

Description

technical field [0001] The invention relates to a new superconducting material-MgB 2 Thin film in situ preparation method. Background technique [0002] The Japanese Akimitsu research group reported MgB for the first time on January 10, 2001 at the "Transition Group Metal Oxide Symposium" in Sendai 2 With superconductivity and superconducting critical transition temperature T c Up to 39K, and published in "Nature". This is the highest T c Binary simple compounds of values. Subsequently, it attracted the attention of scientists internationally, and the superconducting properties of the compound were extensively studied. Studies have shown that the compound not only has a high superconducting critical transition temperature, but also has a large coherence length, high critical current density and critical field, large carrier density, non-weak connection of grain boundaries, small each Anisotropy and large energy gap and other characteristics. Therefore, it can be appli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/38
Inventor 田永君王天生迟振华胡前库罗晓光漆汉宏
Owner YANSHAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com