Silver powder surface modification method, silver soldering paste and preparation method and application of silver soldering paste

A technology of surface modification and silver powder, which is applied in welding equipment, manufacturing tools, welding media, etc., can solve problems such as cracking, sintering quality decline, and sintered silver voids, etc., to achieve a tight interconnection structure, uniform and dense bonding, and bonding good effect

Pending Publication Date: 2022-07-29
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single-solvent system is easy to decompose and volatilize quickly at a certain temperature, which will lead to excessive voids or even cracks inside the sintered silver, resulting in a decrease in sintering quality

Method used

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  • Silver powder surface modification method, silver soldering paste and preparation method and application of silver soldering paste
  • Silver powder surface modification method, silver soldering paste and preparation method and application of silver soldering paste
  • Silver powder surface modification method, silver soldering paste and preparation method and application of silver soldering paste

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preparation example Construction

[0079] Based on the same inventive concept, the embodiments of the present application also provide the above-mentioned preparation method of the silver solder paste, which includes the following steps: after mixing and stirring the surface-modified silver powder and the multi-component organic solvent, the silver solder paste is obtained.

[0080] Based on the same inventive concept, the embodiments of the present application also provide an application of the above-mentioned silver solder paste in chip package interconnection.

[0081] In some embodiments, the chip package interconnection includes a first mother chip, a second mother chip, and a connection layer for connecting the first mother chip and the second mother chip, and the connection layer is made of the above-mentioned silver solder paste through an Press sintering process to sinter to form.

[0082] Specifically, the first mother piece and the second mother piece can be made of copper piece, gold piece, silver p...

Embodiment 1

[0086] The embodiment of the present application provides a method for modifying the surface of silver powder, comprising the following steps:

[0087] S1, place 10g of commercial silver powder (spherical silver powder with a particle size of 60nm) in 120ml of ethanol, vibrate and disperse in an ultrasonic cleaner for 20min and then centrifuge, and obtain wet silver powder after solid-liquid separation; repeat the above steps 3 times;

[0088] S2, mix 0.1 g of n-dodecanethiol, 120 ml of ethanol, and the wet silver powder in step S1, oscillate and disperse in an ultrasonic cleaner for 30 min and then centrifuge, and obtain a surface-coated wet silver powder after solid-liquid separation;

[0089] S3, in step S2, the surface-coated wet silver powder, 6ml of ethanol and 30ml of tert-butanol are mixed, shaken and dispersed in an ultrasonic cleaner for 60min and then placed in a refrigerator for 10h to freeze to obtain a frozen surface-coated silver powder; The surface-coated silv...

Embodiment 2

[0093] The embodiment of the present application provides a method for modifying the surface of silver powder, comprising the following steps:

[0094] S1, place 2g of commercial silver powder (spherical silver powder with a particle size of 50nm) in 30ml of ethanol, vibrate and disperse in an ultrasonic cleaner for 30min and then centrifuge, and obtain wet silver powder after solid-liquid separation; repeat the above steps 3 times;

[0095] S2, mix 0.02g of tert-dodecanethiol, 30ml of ethanol, and the wet silver powder in step S1, oscillate and disperse in an ultrasonic cleaner for 40min and then centrifuge, and obtain a surface-coated wet silver powder after solid-liquid separation;

[0096] S3, in step S2, the surface-coated wet silver powder, 3ml of ethanol and 15ml of tert-butanol are mixed, shaken and dispersed in an ultrasonic cleaner for 40min and then placed in a refrigerator for 12h to freeze to obtain a frozen surface-coated silver powder; The surface-coated silver...

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Abstract

The invention provides a silver powder surface modification method, silver soldering paste and a preparation method and application of the silver soldering paste, and the silver powder surface modification method comprises the following steps that after silver powder is placed in a first solvent to be dispersed, wet silver powder is obtained through separation; a coating agent, a first solvent and wet silver powder are mixed and then dispersed, and surface-coated wet silver powder is obtained through separation; mixing the surface-coated wet silver powder with a second solvent, dispersing, freezing and drying to obtain surface-modified silver powder, and completing surface modification of the silver powder; wherein the coating agent is a thiol organic coating agent. The silver powder is subjected to surface modification through the mercaptan organic coating agent, so that the nano-silver powder is prevented from being easily agglomerated, and the bonding strength is improved. The bonding degree of a connecting interface of a connecting layer formed by sintering the silver soldering paste is good, uniform and compact, the shear strength of the silver soldering paste can reach 10 MPa or above when the silver soldering paste is sintered at the temperature of 300 DEG C, and the silver soldering paste can be well applied to packaging and interconnection of electronic devices.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to a method for modifying the surface of silver powder, a silver solder paste and a preparation method and application thereof. Background technique [0002] With the rapid development of new electronic fields, such as aerospace, new energy vehicles, high-speed railways, displays, radio frequency electronics, etc., there is an increasing demand for efficient use of energy, miniaturized packaging and high-temperature device applications, and silicon-based devices can no longer be used. meet job requirements. Compared with traditional silicon-based semiconductors, wide-bandgap semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) have higher operating temperatures and breakdown voltages, lower switching losses, and can withstand higher It has received extensive attention due to its advantages such as current density. Compared with the instability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/30B23K35/40B22F1/102B22F1/065B22F1/068
CPCB23K35/3006B23K35/40
Inventor 李俊杰沈兴旺赵涛徐亮孙蓉
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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