Asymmetric fast thyristor with strong punch-through

An asymmetric, thyristor technology, used in thyristors, semiconductor devices, electrical components, etc., can solve the problems of low yield, difficult process control, unstable reverse blocking voltage, etc. breaking capacity, reducing the effect of stored charge

Pending Publication Date: 2022-07-15
西安派瑞功率半导体变流技术股份有限公司
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Problems solved by technology

[0004] The object of the present invention is to provide an asymmetric fast thyristor with strong punch-through for the problems of difficult process control, unstable reverse blocking voltage and low yield of existing products.

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  • Asymmetric fast thyristor with strong punch-through
  • Asymmetric fast thyristor with strong punch-through
  • Asymmetric fast thyristor with strong punch-through

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Embodiment Construction

[0024] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0025] refer to figure 2 , a structure of the present invention with a strong punch-through asymmetric fast thyristor is that, from top to bottom, a cathode AL layer 10, a cathode P region 22, an N-base region 30, an anode N buffer layer 42, and an anode high-concentration P+ region are arranged in sequence. 41 and the anode AL layer 50, a cathode high concentration N+ region 20 and a P+ region 21 are provided between the cathode AL layer 10 and the cathode P region 22. The depth of the cathode N+ region 20 is 10-20 μm, and the doping concentration is 1×10 19 ~1×10 20 cm -3 ; The depth of the cathode P+ region 21 is 10-20 μm, and the doping concentration is 1×10 18 ~1×10 19 cm -3 ; The depth of the cathode P region 22 is 45 to 140 μm, and the doping concentration is 1×10 14 ~1×10 17 cm -3 ; The thickness of the N-base region 30 is 200...

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Abstract

The invention provides an asymmetric fast thyristor with strong punch-through, which is sequentially provided with a cathode AL layer, a cathode P region, an N-base region, an anode N buffer layer, an anode high-concentration P + region and an anode AL layer from top to bottom, and is characterized in that a cathode high-concentration N + region and a P + region are arranged between the cathode AL layer and the cathode P region; the thickness of the N-base region of the structure is about 20%-50% thinner than that of a common symmetric fast thyristor, and the thinning degree of the chip is determined according to a reverse blocking voltage value required by application. Therefore, the on-state voltage drop of the device is greatly reduced, the di / dt capability is improved, the storage charge is reduced, the rapid turn-off capability is improved, and good compromise between the turn-on characteristic and the turn-off characteristic is realized. The device is mainly applied to the field of high-power medium-frequency and high-frequency induction heating power supplies.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor device manufacturing, and in particular relates to an asymmetric fast thyristor with strong punch-through. Background technique [0002] At present, induction heating has become an indispensable technology in the fields of national defense, ships, aircraft and automobile manufacturing. In the field of induction heating, thyristors are still widely used in power frequency and medium frequency fields due to their advantages of large capacity, high pressure resistance and high efficiency, especially In the case of the same capacity, thyristors have incomparable advantages in cost compared with self-shutoff devices, such as power MOSFETs, IGBTs, etc.; intermediate frequency power supplies based on fast thyristors are mainly used in smelting, heat penetration, welding and quenching aspect. Therefore, the development of intermediate frequency power supply based on fast thyristor is of great...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L29/167
CPCH01L29/74H01L29/167
Inventor 张磊范晓波王国卫胡茜党敏青刘世辉周哲
Owner 西安派瑞功率半导体变流技术股份有限公司
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