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Light emitting diode and preparation method thereof

A technology for light-emitting diodes and light-emitting layers, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of insufficient stability of the water-oxygen environment of light-emitting diodes, and achieve good thermal stability, improved stability, and improved stability. The effect of gas barrier properties

Pending Publication Date: 2022-06-24
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a light-emitting diode and its preparation method, aiming to solve the problem of insufficient stability of the existing light-emitting diode in the water-oxygen environment

Method used

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  • Light emitting diode and preparation method thereof
  • Light emitting diode and preparation method thereof
  • Light emitting diode and preparation method thereof

Examples

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preparation example Construction

[0059] In a second aspect, the first aspect of the present application provides a method for preparing a light-emitting diode, comprising the following steps:

[0060] S10. Provide a prefabricated device, the prefabricated device includes an anode substrate, and a light-emitting layer disposed on an anode surface of the anode substrate.

[0061] In the embodiments of the present application, the prefabricated device is a local device that already has an anode substrate and after the light-emitting layer is prepared. In some embodiments, the prefabricated device further includes a hole functional layer between the anode and the light emitting layer. The hole functional layer includes at least one of a hole injection layer, a hole transport layer and an electron blocking layer.

[0062] In the examples of the present application, the preparation of the prefabricated device is not strictly limited, and can be prepared by conventional methods. In some embodiments, a method for p...

Embodiment 1

[0074] A quantum dot light-emitting diode with an upright structure is prepared by the following method:

[0075] Spin coating of PEDOT:PSS:s-MoO on ITO substrate 3 , and annealed in air to prepare a hole injection layer with a thickness of 30 nm;

[0076] In a nitrogen atmosphere, PVK was spin-coated on the hole injection layer and annealed at 140 °C to prepare a hole transport layer with a thickness of 20 nm;

[0077] CdSe@ZnS quantum dots were spin-coated on the hole transport layer to prepare a quantum dot light-emitting layer with a thickness of 40 nm;

[0078] MZO was spin-coated on the quantum dot light-emitting layer and annealed at 90 °C for 30 minutes to prepare an electron transport layer with a thickness of 50 nm;

[0079] 10nm Al was deposited on the electron transport layer by plasma enhanced atomic layer deposition (PEALD). 2 O 3 Thin films and 10nm TiO 2 film to obtain a composite film;

[0080] An Al electrode with a thickness of 85 nm was evaporated on ...

Embodiment 2

[0083] The difference from Example 1 is: 10nm TiO 2 The film was replaced with 10nm ZrO 2 film.

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Abstract

The invention relates to the technical field of photoelectric devices, and provides a light-emitting diode and a preparation method thereof. The light-emitting diode comprises an anode and a cathode which are oppositely arranged, a light-emitting layer arranged between the anode and the cathode, an electron transport layer arranged between the cathode and the light-emitting layer, and a composite film arranged between the cathode and the electron transport layer, the composite thin film comprises an aluminum oxide thin film arranged adjacent to the electron transport layer, and a nano metal oxide thin film or a silicon nitride thin film arranged far away from the electron transport layer. The light-emitting diode provided by the invention can effectively block the permeation of water and oxygen, and improves the water-oxygen environment stability of the device.

Description

technical field [0001] The application belongs to the field of optoelectronic devices, and in particular relates to a light emitting diode and a preparation method thereof. Background technique [0002] Quantum dots (QDs), a class of nanomaterials composed of a small number of atoms, whose radii are usually smaller or close to the exciton Bohr radius, exhibit remarkable quantum confinement effects and have unique optical properties such as luminescence. The spectrum is continuously adjustable by the size and composition of the material itself, narrow half-peak width, high fluorescence efficiency, long life, excellent monodispersity and strong photothermal stability. These unique properties make them widely used in displays, lighting, biomarkers, and solar cells. [0003] Quantum dot electroluminescence is a new type of solid-state lighting technology. It has the advantages of low cost, light weight, fast response speed and high color saturation. It has broad development pro...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/115H10K50/16H10K71/40H10K50/171H10K71/00H10K2102/00
Inventor 张天朔
Owner TCL CORPORATION
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