Semiconductor integrated device and manufacturing method thereof

Abstract

The invention discloses a semiconductor integrated device and a manufacturing method thereof, and belongs to the technical field of semiconductors. The manufacturing method of the semiconductor integrated device comprises the following steps that a substrate is provided, and a plurality of semiconductor devices are arranged on the substrate; forming a dielectric covering layer and a dielectric layer on the semiconductor device; etching the dielectric covering layer and the dielectric layer to form a plurality of openings, and forming metal layers in the openings; injecting ions into the surface of the metal layer to form a doped region; forming a top dielectric covering layer on the metal layer; and carrying out annealing treatment on the metal layer to form a metal covering layer at the doped region. According to the semiconductor integrated device and the manufacturing method thereof provided by the invention, the performance of the semiconductor integrated device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and particularly relates to a semiconductor integrated device and a manufacturing method thereof. Background technique [0002] With the continuous development of integrated circuits, the feature size of semiconductor devices is reduced, and the integration degree of integrated circuits is continuously improved. In integrated devices, high-density metal interconnections are used between different semiconductor devices. At present, metal copper wiring with lower resistance has gradually replaced metal aluminum wiring, but metal copper is difficult to etch. In practical applications, the adhesion between copper and the dielectric cover layer is poor, and the interface bonding energy is small. The electromigration problem of the interconnect structure with the dielectric cap layer becomes more and more serious with the reduction of the critical dimension, causing electromigration failure and...

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Problems solved by technology

At present, metal copper wires with lower resistance have been gradually used to replace metal aluminum wires, but metal copper is difficult to etch. In practical applications, the adhesion between copper and the dielectric covering layer is poor, and the interface binding energy is small. The electromigration problem of the interconnection structure of the dielectric capping layer becomes more and more serious with the reduction of the critical dimension, causing electromigration failure and reducing the performance of semiconductor integrated devices

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