High-performance lithium-calcium-tantalum-nickel-zinc-niobium-magnesium-tungsten modified PZT piezoelectric ceramic prepared at low temperature

A piezoelectric ceramic, high-performance technology, applied in the field of piezoelectric ceramic materials, can solve the problems of ceramic electrical performance deterioration, affecting the reliability of multi-layer devices, etc., to achieve the effect of improving crystal grains, good piezoelectric performance, and low sintering temperature

Pending Publication Date: 2022-06-21
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional PZT modified piezoelectric ceramics are sintered at a high temperature of about 1200°C, so the internal electrodes cannot use pure Ag (melting point ≈961°C) at such a high temperature, and the Ag-Pd electrode layer will also diffuse into the ceramic layer, resulting in ceramic Deterioration of electrical properties, thereby affecting the reliability of multilayer devices

Method used

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  • High-performance lithium-calcium-tantalum-nickel-zinc-niobium-magnesium-tungsten modified PZT piezoelectric ceramic prepared at low temperature
  • High-performance lithium-calcium-tantalum-nickel-zinc-niobium-magnesium-tungsten modified PZT piezoelectric ceramic prepared at low temperature
  • High-performance lithium-calcium-tantalum-nickel-zinc-niobium-magnesium-tungsten modified PZT piezoelectric ceramic prepared at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 6

[0029] The XRD pattern of the high-performance PZT modified piezoelectric ceramics prepared at low temperature is shown in figure 1 , figure 1 It shows that the PZT modified piezoelectric ceramic is a pure perovskite phase; the ZJ-3 quasi-static d 33 meter, the measured piezoelectric coefficient d 33 See figure 2 , is 570pC / N; use Agilent 4980A precision impedance meter to connect temperature control furnace to measure the change of dielectric constant with temperature, which can be obtained from image 3 The Curie temperature of the obtained sample was 299°C.

[0030] Example 7

[0031] Example 8

Embodiment 2

Embodiment 3

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Abstract

The general formula of the piezoelectric ceramic is Pb1-x-yLixCayTauu [(Ni, Zn) 1 / 3Nb2 / 3] v (Mg1 / 2W1 / 2) w (Ti, Zr) 1-u-v-wO3, 0.001 < = x < = 0.005, 0.001 < = y < = 0.005, 0 < = u < = 0.005, 0.01 < = v < = 0.05, and 0.01 < = w < = 0.05. PZT modified piezoelectric ceramic powder sintered at the low temperature of 850-950 DEG C is prepared by adopting a solid-phase reaction method, and then the ceramic material is prepared through the processes of granulation, tabletting, glue discharging, sintering, silver firing, polarization and the like. The result shows that the PZT modified ceramic material prepared at the sintering temperature of 850-950 DEG C is compact in crystal grain, uniform in crystal grain, sufficient in crystallization and obvious in liquid-phase sintering characteristic, and the piezoelectric property is greatly improved.

Description

technical field [0001] The field of the invention belongs to the field of piezoelectric ceramic materials, in particular to a high-performance lithium-calcium-tantalum-nickel-zinc-niobium-magnesium-tungsten modified PZT piezoelectric ceramic prepared at low temperature. Background technique [0002] PZT is a traditional piezoelectric ceramic, which has good dielectric, ferroelectric, piezoelectric, pyroelectric and other effects. Its raw material is cheap and suitable for factory production. It can be modified to obtain ceramics suitable for various purposes. Material. Multilayer piezoelectric ceramics have alternating ceramic layers and inner metal electrode layers. With the rapid development of science and technology, multilayer piezoelectric ceramics have been studied more and more widely, and are widely used in brakes, converters, and sensors. Generally, Ag-Pd electrodes are used for the internal electrodes of multilayer ceramics, and the co-firing temperature ranges f...

Claims

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Application Information

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IPC IPC(8): C04B35/493C04B35/622
CPCC04B35/493C04B35/622C04B2235/3203C04B2235/3208C04B2235/3255C04B2235/3279C04B2235/3251C04B2235/3206C04B2235/326C04B2235/3284
Inventor 刘洪陈浩朱建国
Owner SICHUAN UNIV
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