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Silicon carbide wafer wax pasting method and auxiliary wax pasting device

A silicon carbide crystal and silicon carbide technology, applied in the field of silicon carbide wafer waxing methods and auxiliary waxing devices, can solve the problems of unfavorable wafer waxing yield, residual wax layer bubbles, and increased enterprise costs, etc., to achieve the elimination of bubbles, The effect of improving yield rate and improving efficiency

Pending Publication Date: 2022-06-21
北京晶格领域半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the wax is melted, when using the cylinder pressure of the waxing machine to compact the wafer, due to the difference in the thickness of the wax layer and the proficiency of the workers, the air around the wafer is likely to cause waxing bubbles. If the air cannot be discharged in time during the wafer compaction process, it will Causes air bubbles to remain in the middle of the wax layer
Therefore, the traditional manual waxing method is not conducive to the yield of wafer waxing, which not only reduces the work efficiency, but also increases the cost of the enterprise

Method used

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  • Silicon carbide wafer wax pasting method and auxiliary wax pasting device
  • Silicon carbide wafer wax pasting method and auxiliary wax pasting device
  • Silicon carbide wafer wax pasting method and auxiliary wax pasting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] A method for manually applying wax to a silicon carbide wafer with a size of 4 inches, the method comprising:

[0084] Step (1): place the 4-inch silicon carbide wafer on the auxiliary wax sticking device with the surface to be waxed facing upward, and then use the tray (made of iron) of the auxiliary wax sticking device to place the silicon carbide wafer on the ceramic plate Heating, the preset temperature of the ceramic plate is 100 ℃;

[0085] Step (2): when the preset temperature of the ceramic disc reaches 100°C, the silicon carbide wafer is preheated, and the alcohol-soluble solid bonding wax is used to coat the center of the upper surface of the silicon carbide wafer with wax, and the wax coating area is: A circle with a diameter of 3cm;

[0086] Step (3): use an auxiliary wax sticking device to remove the wax-coated silicon carbide wafer from the ceramic plate in step (2), and re-cool the wax layer to solidify at room temperature (25° C.);

[0087] Step (4): M...

Embodiment 2

[0091] Embodiment 2 is basically the same as Embodiment 1, except that:

[0092] Using silicon carbide wafers with a size of 6 inches; the tray of the auxiliary wax sticking device is made of aluminum;

[0093] The preset temperature of the ceramic plate is 120° C.; in step (2), a temperature-resistant solid bonding wax is used, and the wax-coated area is a circle with a diameter of 4 cm; in step (5), the continuous vibration of the vibration table after the wax layer is spread is completed The time is 40s.

Embodiment 3

[0095] Embodiment 3 is basically the same as Embodiment 1, except that:

[0096] 2-inch silicon carbide wafer is used; the tray of the auxiliary wax sticking device is made of copper-iron alloy;

[0097] The preset temperature of the ceramic plate is 110° C.; in step (2), a high-viscosity solid bonding wax is used, and the wax-coated area is a circle with a diameter of 1 cm.

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Abstract

The invention provides a silicon carbide wafer wax sticking method and an auxiliary wax sticking device.The silicon carbide wafer wax sticking method comprises the steps that a silicon carbide wafer is placed on a ceramic plate through the auxiliary wax sticking device, and the ceramic plate is heated; when the ceramic plate reaches a preset temperature, waxing the central position of the to-be-waxed surface of the silicon carbide wafer; wherein the to-be-waxed surface is one surface, far away from the ceramic disc, of the silicon carbide wafer; the waxed silicon carbide wafer is taken down from the ceramic plate through an auxiliary wax pasting device and cooled, and the silicon carbide wafer with a wax layer is obtained; the silicon carbide wafer with the wax layer is placed on a ceramic plate reaching the preset temperature through an auxiliary wax pasting device, so that bonding of the silicon carbide wafer and the ceramic plate is achieved; wherein the wax layer faces the ceramic plate. The auxiliary wax pasting device is adopted for manually pasting wax on the silicon carbide wafer, the requirement for the wax pasting proficiency of workers is lowered, bubbles can be eliminated in manual wax pasting, efficient manual wax pasting is achieved, and the paster yield is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer waxing, in particular to a silicon carbide wafer waxing method and an auxiliary waxing device. Background technique [0002] At present, in the upstream waxing processing field of silicon carbide wafers, the traditional waxing device needs to go through multiple steps such as heating, waxing, patching, pressing, and waxing, and the efficiency is low. Although there are high-efficiency automatic placement equipment on the market, the price of this equipment is high, and in the early stage of research and development or the stage of product performance testing by downstream manufacturers, due to the small number of patches, engineers still cannot perform experiments. Avoid manual waxing. [0003] In the existing traditional manual waxing process for wafers, the ceramic plate needs to be heated to a certain temperature in advance to ensure that the bonding wax can be melted. Then place ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00H01L21/673
CPCB28D5/0082H01L21/673
Inventor 张泽盛张世博
Owner 北京晶格领域半导体有限公司
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