Semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as inability to transplant, achieve the effects of increasing area, improving ESD capability, and improving ESD protection level

Pending Publication Date: 2022-05-27
深圳市时代速信科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Based on this, based on the characteristics of depletion-mode GaN HEMT devices, it is impossible to transplant the ESD protection structure of GaN-based HEMT power electronic devices to depletion-mode GaN-based HEMT RF devices

Method used

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  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

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Embodiment Construction

[0036] The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments, and illustrate the best mode for practicing the embodiments. After reading the following description with reference to the accompanying drawings, those skilled in the art will understand the concepts of the invention and will recognize applications of these concepts not specifically set forth herein. It should be understood that these concepts and applications are within the scope of the invention and the appended claims. It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. ...

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Abstract

A semiconductor device and a preparation method thereof relate to the technical field of semiconductors. The device comprises a depletion type HEMT device body and an ESD protection structure, the ESD protection structure comprises a diode group connected between a grid electrode of the depletion type HEMT device body and a source electrode of the depletion type HEMT device body, and the diode group comprises a Schottky diode which is conducted from the source electrode of the depletion type HEMT device body to the grid electrode direction of the depletion type HEMT device body; the ESD protection structure is located below a grid electrode bonding pad of the depletion mode HEMT device body; and / or, the ESD protection structure is located below the source electrode thickening metal of the depletion mode HEMT device body, and the orthographic projection of the ESD protection structure on the substrate of the depletion mode HEMT device body and the orthographic projection of the active region of the depletion mode HEMT device body on the substrate are not overlapped. According to the device, the ESD protection level can be improved on the premise that the effective chip area of the device is not occupied.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor device and a preparation method thereof. Background technique [0002] GaN-based HEMT (High electron mobility transistor, high electron mobility transistor) devices, as the third generation semiconductor devices, have higher frequency, higher operating temperature, higher breakdown voltage and higher power. High-voltage, high-temperature, high-power devices have broad application prospects in military and civilian fields. [0003] GaN-based HEMT power electronic devices are mainly enhancement-mode devices (threshold voltage Vth>0V), that is, P-type GaN is reserved under the gate to deplete the two-dimensional electron gas in the channel, so that when the gate is not biased or zero biased When the source-drain ends are turned off. The device is turned on only when a positive voltage (above the threshold voltage) is applied to the gate. Due...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L27/02H01L27/07H01L21/8252
CPCH01L27/0248H01L23/60H01L27/0727H01L21/8252
Inventor 乐伶聪许建华杨天应
Owner 深圳市时代速信科技有限公司
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