Silicon carbide single crystal wafer, silicon carbide crystal, preparation method and semiconductor device

Abstract

The invention provides a silicon carbide single crystal wafer and a preparation method thereof, a silicon carbide crystal and a preparation method thereof, and a semiconductor device, the surface of the silicon carbide single crystal wafer is the surface of which the normal direction and the c direction form an included angle of 0-8 degrees, the aggregation dislocation on the silicon carbide single crystal wafer is less than 300 / cm < 2 >, and the aggregation dislocation refers to that after molten KOH corrosion, the surface of the silicon carbide single crystal wafer is subjected to thermal treatment. In the obtained corrosion pits, the distance between the geometric centers of any two corrosion pits is less than 80 microns. Even if the dislocation density is relatively high, the aggregation dislocation density is also relatively low, so that the yield of the silicon carbide-based device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a silicon carbide single wafer and a preparation method thereof, a silicon carbide crystal and a preparation method thereof, and a semiconductor device. Background technique [0002] In the prior art, dislocation is one of the main defects of a single silicon carbide wafer; it has a significant impact on the performance of silicon carbide devices. At present, the dislocation density of products on the market is still relatively high. In recent years, with technological progress, the dislocation density has gradually decreased , but still does not meet the requirements. [0003] Moreover, the inventors found that even if the dislocation density of the wafer is reduced, the device yield cannot sometimes be improved, and the correlation between dislocations and device failures is still largely unknown. SUMMARY OF THE INVENTION [0004] In view of this, the present...

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Problems solved by technology

[0004] In view of this, the present invention provides a silicon carbide single wafer and its preparation method, a silicon carbide crystal and its preparation method, and a semiconductor device to solve the problem that the dislocation density has been reduced in the prior art, but the device yield has not been improved.

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