Cold source Schottky transistor and preparation process thereof
A preparation process and transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that the sub-threshold swing cannot be broken through, and the power supply voltage and power consumption of MOSFET devices cannot be further reduced.
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[0097] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention , but not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0098] Combine below Figure 1 to Figure 78 The cold source Schottky transistor of the present invention and its preparation process are described.
[0099] Such as figure 1 As shown, a cold source Schottky transistor provided by the present invention includes a substrate 101, a source region, a drain region 4, a channel region 3, a source, a drain and a gate.
[0100] Specifically, the so...
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