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Preparation method of single crystal gallium oxide and process equipment for preparing single crystal gallium oxide

A technology of process equipment and gallium oxide, which is applied to the process equipment for preparing single crystal gallium oxide and the field of preparation of single crystal gallium oxide, which can solve the problem of high cost of single crystal gallium oxide

Pending Publication Date: 2022-04-22
苏州燎塬半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Therefore, the technical problem to be solved by the present invention is to overcome the existing defect of high cost for preparing single crystal gallium oxide, thereby providing a method for preparing single crystal gallium oxide and process equipment for preparing single crystal gallium oxide

Method used

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  • Preparation method of single crystal gallium oxide and process equipment for preparing single crystal gallium oxide
  • Preparation method of single crystal gallium oxide and process equipment for preparing single crystal gallium oxide
  • Preparation method of single crystal gallium oxide and process equipment for preparing single crystal gallium oxide

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Embodiment 1

[0044] This embodiment provides a preparation method of single crystal gallium oxide, such as figure 1 shown, including the following steps:

[0045] Step S1: providing gallium oxide powder;

[0046] Step S2: pressing the gallium oxide powder into bulk gallium oxide 2;

[0047] Step S3: providing a crucible 1, the crucible 1 has a bottom accommodating area and a top opening area, and the bottom accommodating area and the top opening area are separated;

[0048] Step S4: Put the bulk gallium oxide 2 into the bottom accommodation area, and place the seed crystal 3 in the top opening area;

[0049] Step S5: placing the crucible 1 in a flowing protective atmosphere, heating the crucible 1, applying a temperature lower than the decomposition temperature of the seed crystal 3 to the top opening area, and accommodating the bottom The temperature applied in the region is higher than the decomposition temperature of the bulk gallium oxide 2 .

[0050] By placing the crucible 1 in a...

Embodiment 2

[0065] This embodiment provides a process equipment for preparing single crystal gallium oxide, such as image 3 As shown, it includes: a cavity 5; a crucible 1 located in the cavity 5, the crucible 1 has a bottom accommodating area and a top opening area, the bottom accommodating area and the top opening area are separated, the The top opening area is suitable for placing the seed crystal 3; the heating element 6, the heating element 6 is arranged around the side of the cavity tube 5, and the heating element 6 is suitable for heating the crucible 1, so that the The temperature of the top opening area is lower than the temperature of the bottom accommodating area; the air inlet pipe 51 and the air outlet pipe 52, the air inlet pipe 51 communicates with the end of the chamber pipe 5 near the bottom accommodating area, and the air outlet pipe 52 communicates with the end of the lumen 5 close to the top opening area.

[0066] By setting the inlet tube 51 and the outlet tube 52 o...

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Abstract

The invention provides a preparation method of single crystal gallium oxide and process equipment for preparing the single crystal gallium oxide. The preparation method of the single crystal gallium oxide comprises the following steps: providing gallium oxide powder; pressing the gallium oxide powder into blocky gallium oxide; a crucible is provided, a bottom containing area and a top opening area are arranged in the crucible, and the bottom containing area and the top opening area are spaced; placing the block gallium oxide into the bottom accommodating area, and placing a seed crystal in the top opening area; the crucible is placed in a flowing protective atmosphere, the crucible is heated, the temperature applied to the top opening area is lower than the decomposition temperature of the seed crystal, and the temperature applied to the bottom containing area is higher than the decomposition temperature of the block gallium oxide. According to the method, the speed of decomposing the gallium oxide into the gas source is increased, so that the continuous growth speed of the single crystal gallium oxide is increased, the energy is saved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing single-crystal gallium oxide and process equipment for preparing single-crystal gallium oxide. Background technique [0002] β-Ga 2 o 3 The bandgap width is 4.8eV, and the breakdown electric field strength is about 8MV / cm, which has great performance advantages in the field of power electronic devices and optoelectronic devices. At present, the preparation of single crystal β-Ga 2 o 3 Usually, the melt method, such as the guided mode method and the Czochralski method, can be used to prepare large-sized and high-quality single crystal β-Ga 2 o 3 . However, due to β-Ga 2 o 3 The melting point is above 1700°C, and there are high requirements for heating equipment and reaction vessels, so the heating equipment and reaction vessels are expensive. The existing melt method needs to use a crucible made of precious metal iridium i...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/16
CPCC30B23/00C30B29/16
Inventor 不公告发明人
Owner 苏州燎塬半导体有限公司
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