MEMS integrated device and preparation method thereof

Abstract

The invention provides an MEMS integrated device and a preparation method thereof. The device comprises a first rewiring layer, an MEMS layer and an application-specific integrated circuit layer, the MEMS layer and the application-specific integrated circuit layer are connected through wafer-level low-temperature silicon-silicon bonding; the MEMS layer is provided with a first through hole and a second through hole which are filled with copper, the first through hole penetrates through the MEMS layer, and the second through hole penetrates through the cover plate layer and is connected with the MEMS movable structure layer; the first redistribution layer includes an internal wiring connecting the first via, the second via, and the external electrode. The internal electrode is electrically connected with the first through hole. Wafer-level integration and packaging of the MEMS device and the application-specific integrated circuit are completed through wafer-level low-temperature silicon-silicon bonding, the through holes filled with copper are formed in the MEMS layer to achieve vertical interconnection between multiple chip layers, the situation that through holes used for internal and external communication are additionally formed in the application-specific integrated circuit is avoided, copper filling is compatible with the advanced integrated circuit manufacturing process, and the manufacturing cost is reduced. The MEMS device can be directly integrated with an application-specific integrated circuit wafer of less than 90 nanometers, so that the compatibility is improved, the packaging cost is reduced, and the packaging efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of MEMS, in particular to a MEMS integrated device and a preparation method thereof. Background technique [0002] MEMS (Micro-Electro-Mechanical-System, referred to as MEMS) devices and integrated circuits can work effectively. Integrated circuits are used to realize communication between MEMS devices and the outside world; integrated circuits are also used to process signals of MEMS devices, such as analog-to-digital conversion, amplification, and filtering. [0003] At present, most MEMS devices and integrated circuits are integrated and packaged together by stacked integration or side by side, and the electrical connection between chips is realized by wire bonding, in order to achieve shorter signal path length, smaller parasitic capacitance, lower interconnect resistance and smaller package size. The Fraunhofer Institute in Germany proposed the concept of MEMS three-dimensional integration technology ...

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a MEMS integrated device to solve the problem that the MEMS device and the application-specific integrated circuit cannot be directly integrated

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