Semiconductor device, method for manufacturing semiconductor device, and power conversion device

A technology of semiconductor and main conversion, applied in semiconductor/solid-state device manufacturing, output power conversion devices, semiconductor devices, etc., to achieve the effect of reducing the configuration area

Pending Publication Date: 2022-04-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in such a semiconductor device, the size of the semiconductor device can be realized by protruding the leads from the encapsulation resin of the semiconductor device in the vertical direction, but in the encapsulation process of transfer molding, new preparation and installation are required. Mold with slits through which leads can be inserted

Method used

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  • Semiconductor device, method for manufacturing semiconductor device, and power conversion device
  • Semiconductor device, method for manufacturing semiconductor device, and power conversion device
  • Semiconductor device, method for manufacturing semiconductor device, and power conversion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0039] The structure of the semiconductor device according to Embodiment 1 will be described. figure 1 is a plan view showing the semiconductor device according to Embodiment 1, figure 2 yes figure 1 A cross-sectional view at line A-A in .

[0040] Such as figure 1 and figure 2 As shown, a semiconductor device 202 has a semiconductor element 1a, a semiconductor element 1b, a bonding material 2, an inner lead 3e, an outer lead 3f, a metal wire 4a, a metal wire 4b, a packaging resin 5, and an insulating heat dissipation plate 6. The inner lead 3e has a chip Pad 3a.

[0041] The semiconductor element 1a is a power semiconductor element. For example, IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and FWD (Free Wheeling Diode) formed of silicon (Si). The length of one side of the semiconductor element 1 a is 3 mm to 13 mm in plan view.

[0042] The semiconductor element 1 a is mounted on the upper surface of the die...

Embodiment approach 2

[0121] Figure 17 is a plan view showing a semiconductor device 202c according to Embodiment 2, Figure 18 yes Figure 17 Sectional view at line E-E in . In addition, most configurations of the semiconductor device and the method of manufacturing the semiconductor device in this embodiment are the same as those of the first embodiment. Therefore, differences from the semiconductor device and the semiconductor device manufacturing method in Embodiment 1 will be described, and the same or corresponding structures will be given the same reference numerals, and their description will be omitted. The difference from Embodiment 1 lies in the following structure, that is, as Figure 17 ~ Figure 18 As shown, a second bent portion 3h is provided in addition to the first bent portion 3g to the outer lead 3f which is arranged in parallel to the exposed surface of the inner lead 3e exposed from the encapsulating resin 5 .

[0122] Such as Figure 17 and Figure 18 As shown, the inne...

Embodiment approach 3

[0133] Figure 21 It is a cross-sectional view showing a semiconductor device 202e according to the third embodiment. In addition, most configurations of the semiconductor device and the method of manufacturing the semiconductor device in this embodiment are the same as those of the first embodiment. Therefore, differences from the semiconductor device and the semiconductor device manufacturing method in Embodiment 1 will be described, and the same or corresponding structures will be given the same reference numerals, and their description will be omitted. The difference from Embodiment 1 lies in the following structure, that is, as Figure 21 As shown, a groove 9 is provided in the first bent portion 3g of the external lead 3f.

[0134] Figure 22 It is a top view showing the state after the component preparation process of preparing the lead frame 3 of the semiconductor device 202e. Such as Figure 22 As shown, a groove 9 having a depth of about 20% of the thickness of ...

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Abstract

Provided are a semiconductor device that can be reduced in size and a method for manufacturing the semiconductor device. An internal lead (3e) having chip pads (3a, 3b) on the upper surface of which semiconductor elements (1a, 1b) are mounted has a stepped shape, and a part of the surface of the internal lead (3e) is exposed from the encapsulation resin (5) in plan view. An external lead (3f) connected to the internal lead (3e) and connected thereto has a first bent portion (3g) on the side surface of the sealing resin (5) so as to extend in the direction of the upper surface of the die pad (3a), whereby a small-sized semiconductor device can be obtained.

Description

technical field [0001] The present invention relates to a semiconductor device on which a power semiconductor element is mounted, a method of manufacturing the semiconductor device, and a power conversion device. Background technique [0002] In a conventional semiconductor device, leads protrude from the side of a resin portion formed in a package, and are bent at approximately right angles at a bent portion near the resin portion by bending. (For example, refer to Patent Document 1) [0003] In recent years, since semiconductor devices are mounted on control boards together with various electronic components, miniaturization of semiconductor devices is required. Therefore, by making the raised portions of the lead terminals protrude downward from the lower surface of the encapsulating resin, miniaturization of the semiconductor device is achieved. (For example, refer to Patent Document 2) [0004] Patent Document 1: Japanese Unexamined Patent Publication No. 62-229865 (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/49H01L25/18H01L21/60H02M1/00
CPCH01L21/4842H01L23/3735H01L23/49503H01L23/49555H01L23/49562H01L23/49575H01L23/49551H01L23/4334H01L21/565H01L23/3107H01L2224/4903H01L2224/48137H01L2224/48139H01L2224/32245H01L2224/48247H01L2924/181H01L2224/73265H02P27/06H01L2224/48096H01L2924/00012H01L2924/00H02P27/08H01L21/56H01L23/3114H01L24/49H01L24/45H01L24/46H01L2924/13055
Inventor 市川庆太郎
Owner MITSUBISHI ELECTRIC CORP
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