Multi-crucible silicon carbide crystal synchronous growth method and equipment

Abstract

The invention provides a multi-crucible silicon carbide crystal synchronous growth method and equipment, the growth equipment comprises a cavity and a thermal insulation layer assembly arranged close to the inner wall of the cavity, the thermal insulation layer assembly divides the cavity into a plurality of growth cavities, and each growth cavity is internally provided with an independent growth assembly; the independent growth assembly comprises a graphite crucible, a seed crystal tray arranged at the top of the graphite crucible, a heating device arranged on the periphery of the graphite crucible and a driving assembly arranged at the bottom of the graphite crucible. According to the multi-crucible silicon carbide crystal synchronous growth equipment, a multi-section independently controlled graphite heater is adopted for heating, a traditional induction heating mode is replaced, the radial and longitudinal temperature gradients of the crucibles can be adjusted more accurately, particularly, the growth cost of the silicon carbide crystals can be greatly reduced, and the internal quality of a single crystal ingot can be ensured.

Description

technical field [0001] The invention relates to a multi-crucible silicon carbide crystal synchronous growth method and equipment, belonging to the technical field of silicon carbide crystals. Background technique [0002] Silicon carbide crystal is a third-generation wide-bandgap semiconductor material with excellent performance. It has the characteristics of wide bandgap, high carrier saturation concentration, high critical breakdown electric field, high thermal conductivity, and high chemical stability. It is ideal for preparing high-frequency, The best material for integrated electronic devices such as high power, high density, high temperature, and radiation resistance. However, due to the harsh growth conditions and slow growth rate of silicon carbide crystals, the growth cost of silicon carbide crystals is very high, so silicon carbide crystals can only be used in High value-added electronic components. [0003] The industrial growth of silicon carbide crystals mainly...

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Problems solved by technology

[0004]At present, the PVT method of induction heating is generally used in the industry to grow silicon carbide crystals. The induction coil causes the graphite crucible to generate eddy currents to generate heat directly, and the eddy currents are mainly concentrated on the surface of the graphite crucible, causing the crucible to The radial gradient of the internal temperature is large, so the radial gradient of the temperature is large during the crystal growth process, resulting in excessive internal stress of the crystal and cracking, especially when growing large-sized crystals, the yield rate of the crystal growth process is low; In addition, the traditional PVT growth device is to install a crucible in a cavity, and only one silicon carbide crystal can be grown within a certain period of time. The cost of crystal growth is much higher than that of silicon single crystal, which limits the application range of silicon carbide crystal to a large extent

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