Electrostatic protection method of integrated circuit

Abstract

The embodiment of the invention discloses an electrostatic protection method for an integrated circuit, and the method comprises the steps: arranging the integrated circuit on a first chip, and enabling the integrated circuit to comprise an input port; arranging an electrostatic protection circuit on a second chip, wherein the electrostatic protection circuit comprises a first input lead-out port, a second input lead-out port, a first diode, a second diode, a capacitor, an N-type field effect transistor and a ground end lead-out port; and connecting the first input lead-put port with the input port, so that the electrostatic protection circuit can be connected with the integrated circuit, and the electrostatic protection circuit can perform electrostatic protection on the integrated circuit. Moreover, the integrated circuit and the electrostatic protection circuit are arranged on different chips, thereby avoiding the electrostatic protection design on the chip where the integrated circuit is located, and solving a problem that the electrostatic protection design cannot be carried out because of the limitation of the substrate material of the chip where the integrated circuit is located. And the electrostatic protection of a novel material integrated circuit which is sensitive to static electricity can be realized.

Description

technical field [0001] The present application relates to the technical field of integrated circuits, in particular to an electrostatic protection method for integrated circuits. Background technique [0002] With the development of integrated circuit technology, more and more new material integrated circuits have been or will be launched soon. The substrate materials of these new material integrated circuits are different from those of traditional silicon-based integrated circuits. Compared with traditional silicon-based integrated circuits The circuit has more superior performance, and it has become a new generation of stars that can increase the speed of computers and reduce the power consumption of electronic equipment. [0003] However, these new material integrated circuits are usually very sensitive to electrostatic pulses and are prone to electrostatic damage, and these new material integrated circuits also have some limitations in the characteristics of their substr...

AI Technical Summary

Problems solved by technology

[0003] However, these new material integrated circuits are usually very sensitive to electrostatic pulses and are prone to electrostatic damage, and these new material integrated circuits also have some limitations in the characteristics of their substrate materials, which will make the electrostatic protection design of existing integrated circuits impossible to achieve. Therefore, it is impossible to effectively protect such integrated circuits from static electricity, so that in the actual application of such integrated circuits, it is easy to cause the integrated circuit function to fail due to electrostatic damage.

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