Zinc-doped indium oxide powder, sputtering target material and preparation method thereof

A technology of sputtering target material and indium oxide, which is applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problems of powder agglomeration and poor dispersion, and achieve stable reaction system, The effect of high density and high purity

Pending Publication Date: 2022-01-21
ZHENGZHOU UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] Patent CN102653413B discloses a zinc-doped indium oxide nanometer gas-sensing material and its preparation method. The method adopted is the liquid phase precipitation method. This method has simple process and low production cost, but the powder is easy to agglomerate during the preparation process. poor dispersion

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  • Zinc-doped indium oxide powder, sputtering target material and preparation method thereof
  • Zinc-doped indium oxide powder, sputtering target material and preparation method thereof
  • Zinc-doped indium oxide powder, sputtering target material and preparation method thereof

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preparation example Construction

[0023] The invention provides a method for preparing zinc-doped indium oxide powder, comprising the following steps:

[0024] 1) After mixing the indium salt, the zinc salt, the precipitating agent and water, perform a hydrothermal reaction to obtain a precursor mixed solution; the temperature of the hydrothermal reaction is 150-250° C., and the time is 5-20 hours;

[0025] 2) Washing, drying and calcining the precursor mixed liquid in the step 1) sequentially to obtain zinc-doped indium oxide powder; the calcining temperature is 400-800°C.

[0026] In the invention, after mixing indium salt, zinc salt, precipitating agent and water, hydrothermal reaction is carried out to obtain precursor mixed solution.

[0027] In the present invention, the indium salt is preferably at least one of indium nitrate, indium sulfate and indium chloride, more preferably indium nitrate. The indium salt in the present invention is preferably mixed in the form of an indium salt solution, and the c...

Embodiment 1

[0048] The preparation method of indium nitrate solution:

[0049] The nitric acid solution is reacted with metal indium to prepare an indium nitrate solution; the concentration of indium nitrate in the reaction solution is calculated according to the mass loss before and after the reaction of indium ingots; deionized water is added to the reaction solution so that the concentration of indium nitrate is 1.5mol / L, Indium nitrate solution was obtained.

[0050] Preparation method of zinc-doped indium oxide powder

[0051] 1) 359g ZnSO 4 ·7H 2 Mix O solid with 833 mL of the above indium nitrate solution (In / Zn=1:1), add deionized water until the total volume of the solution is 2500 mL, stir at room temperature to completely dissolve the solid to obtain a mixed solution, in which the content of indium atoms is 1.25 mol ;

[0052] 2) Slowly add 25% ammonia water to the mixed solution until the pH value of the solution is 7, transfer to a hydrothermal reactor and react at 180°C ...

Embodiment 2

[0059] The preparation method of indium nitrate solution: identical with embodiment 1.

[0060] The preparation method of zinc-doped indium oxide powder: in step 2), slowly add 25% ammonia water to the mixed solution until the pH value of the solution is 5, and the other steps are exactly the same as in Example 1.

[0061] The preparation method of the sputtering target: the zinc-doped indium oxide powder obtained in this example is used as the raw material, and the rest is exactly the same as that of Example 1.

[0062] The IZO sputtering target can achieve densification, and the main phase is Zn atoms doped to In 2 o 3 phase, the rectangular secondary phase is Zn 3 In 2 o 6 , the relative density is 99.2%, and the average grain size is 8μm.

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Abstract

The invention provides zinc-doped indium oxide powder, a sputtering target material and a preparation method thereof, and belongs to the technical field of new materials. The precursor powder of the zinc-doped indium oxide is synthesized in one step by adopting a hydrothermal method, the reaction system is stable, and the obtained zinc-doped indium oxide powder is high in purity, uniform in crystal form distribution, good in dispersity and high in crystallinity; the sputtering target material obtained after the powder is sintered is small in grain size, uniform in distribution and high in density. The whole process from powder preparation to forming and sintering is simple and convenient, low in cost and suitable for industrial production.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a zinc-doped indium oxide powder, a sputtering target and a preparation method thereof. Background technique [0002] Multi-component metal oxide sputtering targets with indium oxide as the main material have been widely used in the fields of electrodes, liquid crystal displays, touch panels, solar cells, and integrated optoelectronic devices. Indium tin oxide (ITO), as a traditional transparent conductive oxide, occupies a large share in the market, and the properties of the thin film made of its sputtering target have been recognized by the industry, such as low resistivity, high transmittance, easy to Etching processing, etc. However, the ITO thin film is in a crystalline state, and there are problems such as reduced film precision due to grain growth, and poor display caused by residual grains. These structural defects will limit its development in future flexible disp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622C23C14/08C23C14/34C23C14/35
CPCC04B35/01C04B35/622C23C14/35C23C14/3414C23C14/086C04B2235/3284C04B2235/6567C04B2235/77C04B2235/95C04B2235/6562C04B2235/786
Inventor 刘洋孙本双曾学云刘超飞刘笑开王之君刘苗陈杰舒永春何季麟
Owner ZHENGZHOU UNIV
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