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Palladium-coated copper bonding wire, method for producing palladium-coated copper bonding wire, semiconductor device using same, and method for producing the semiconductor device

A manufacturing method and bonding wire technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of easy oxidation of copper wires, cheaper than gold, and improved characteristics, so as to maintain reliable bonding performance, improving inclination, and suppressing short-circuit defects

Pending Publication Date: 2021-12-21
TANAKA DENSHI KOGYO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the copper wire has a problem of being easily oxidized, in order to eliminate the problem of oxidation, a palladium-coated copper wire whose surface is covered with palladium has come to be used.
[0005] Palladium-coated copper wires have the problem of oxidation of the wires and airless balloons that copper itself has, and the problem of improved characteristics that are easily damaged by coating, but because it is cheaper than gold, it is widely used in personal computers and its peripheral equipment, communications, etc. Rapidly spread in the use of consumer equipment such as equipment under relatively mild conditions

Method used

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  • Palladium-coated copper bonding wire, method for producing palladium-coated copper bonding wire, semiconductor device using same, and method for producing the semiconductor device
  • Palladium-coated copper bonding wire, method for producing palladium-coated copper bonding wire, semiconductor device using same, and method for producing the semiconductor device
  • Palladium-coated copper bonding wire, method for producing palladium-coated copper bonding wire, semiconductor device using same, and method for producing the semiconductor device

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Embodiment

[0112] Next, examples will be described. The present invention is not limited to the following examples. Examples 1-33 are examples, and Examples 34-36 are comparative examples.

[0113] Copper (Cu) with a purity of 99.99% by mass or more was used as a core material, which was continuously cast, rolled while performing pre-heat treatment, and then wire-drawn to obtain a copper wire rod with a wire diameter of 400 μm to 600 μm. For lead wires containing trace elements and chalcogen elements in the copper core material, copper alloy wires were obtained in the same manner as above using copper alloys to which the respective trace elements and chalcogen elements were added so as to have the predetermined concentrations described in the tables. Raw materials with a purity of 99.99% by mass or higher were used for each of the trace elements and the chalcogenides. Hereinafter, a case of producing a palladium-coated copper bonding wire using a copper wire will be described, but the ...

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Abstract

A palladium-coated copper bonding wire is provided by the invention which includes a core material composed mainly of copper and a palladium layer on the core material, wherein: the concentration of palladium with respect to the entire wire is 1.0-4.0 mass%; and the work hardening coefficient, when the amount of change in the wire elongation rate is at least 2% and at most the maximum elongation rate [epsilon]max%, is at most 0.20.

Description

technical field [0001] The present invention relates to a palladium-coated copper bonding wire suitable for ball-bonding electrodes of semiconductor elements and external electrodes, a method for manufacturing the same, a semiconductor device using the same, and a method for manufacturing the semiconductor device. Background technique [0002] In general, electrodes of a semiconductor element and external electrodes on a circuit wiring board for a semiconductor are connected by wire bonding. In this wire bonding, an electrode of a semiconductor element is bonded to one end of a bonding wire by a method called ball bonding (first bonding), and the other end of the bonding wire is bonded to an external electrode by a method called wedge bonding. Engagement (Second Engagement). In ball bonding, a molten ball is formed at the tip of the bonding wire, and the bonding wire is connected to, for example, the surface of an aluminum electrode on a semiconductor element through the mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22F1/08H01L21/60
CPCH01L2224/48451H01L2224/48247H01L2224/48091C22C9/00C22F1/08H01L23/4952H01L2224/48465H01L2224/85439H01L2224/85444H01L2224/45565H01L2224/85051H01L2224/45572H01L24/45H01L2224/45147H01L2224/45015H01L24/43H01L2224/48227H01L24/85H01L24/48H01L2224/4321H01L2224/43848H01L2224/05624H01L2924/10253H01L2924/14H01L2924/00014H01L2224/45664H01L2224/45644H01L2924/01079H01L2924/01046H01L2924/01078H01L2924/01045H01L2924/01028H01L2924/01049H01L2924/01031H01L2924/01015H01L2924/01047H01L2924/01026H01L2924/01081H01L2924/20751H01L2924/20752H01L2924/01014H01L2924/01029C22C2204/00H01L23/49805H01L23/49816H01L2224/43825H01L2224/48011H01L2224/48245H01L2224/48453H01L2224/85045H01L2924/3512
Inventor 高田满生前田菜那子松泽修石川良小林卓也
Owner TANAKA DENSHI KOGYO KK
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