Organic triode manufacturing method and organic triode

A manufacturing method and technology of triodes, which are applied in semiconductor/solid-state device manufacturing, nanotechnology, photovoltaic power generation, etc., can solve the problems of low power conversion rate of photovoltaic power generation, and achieve heat dissipation, fast response speed, and volume reduction. Effect

Inactive Publication Date: 2021-12-21
韩三保
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Problems solved by technology

[0003] Aiming at the deficiencies of the prior art, the present invention provides a manufacturing method of an organic triode and an organic triode, which solves the problem of low power conversion rate of photovoltaic power generation

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  • Organic triode manufacturing method and organic triode
  • Organic triode manufacturing method and organic triode

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] see Figure 1-2 , The invention provides a technical solution: a method for manufacturing an organic triode and the organic triode.

[0026] figure 1 It is a flow chart of a method for manufacturing an organic triode according to the present invention. Such as figure 1 As shown, the manufacturing method of the organic triode includes:

[0027] In step S11, silicon oxide is sputtered on the first surface of the silicon substrate by magnetron sputteri...

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Abstract

The invention discloses an organic triode manufacturing method and an organic triode, and relates to the technical field of photovoltaic power generation. According to the manufacturing method of the organic triode, a back electrode, an organic cushion layer, a mask layer, a field oxide layer side wall, an aluminum oxide thin film layer, a polycrystalline germanium-silicon layer, an emitting electrode base region, a base electrode base region, an organic chemical layer, a first contact hole, a second contact hole, a first convex point, a second convex point, a polycrystalline silicon layer and a metal layer are sequentially formed, and then the organic triode is obtained. The size of the triode can be effectively reduced, and application of the triode is facilitated; the triode is small in size, so that heat dissipation of the triode is facilitated; organic matter such as nickel phthalocyanine is added into the organic triode, and a good field emission effect can be formed between the control electrode and the emission electrode, so that field emission carriers of the emission electrode can be triggered at low voltage. Therefore, the large amplification factor can be achieved, and the high reaction speed can be achieved.

Description

technical field [0001] The invention relates to the technical field of triode manufacturing, in particular to a method for manufacturing an organic triode and the organic triode. Background technique [0002] In the past ten years, III-nitride materials have shown excellent characteristics in the field of optoelectronic and microelectronic devices such as solid diodes, triodes and solar cells, and their related devices have been valued and widely studied by scientific research institutions around the world. Human beings have never stopped the research on organic materials, but the research on organic triodes has just started. Because organic materials generally have less restraint on their surface electrons, when a small voltage is applied, electrons can be generated. Therefore, the magnification and response speed of the organic triode are relatively fast, which has been well received by technicians. And it is precisely because of this characteristic that the research on t...

Claims

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Application Information

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IPC IPC(8): H01L51/40H01L51/30H01L51/05B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K71/00H10K85/311H10K85/331H10K10/00Y02E10/549
Inventor 韩三保
Owner 韩三保
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