Crystal bar processing method for determining three-dimensional space relation of crystal bar

Abstract

The invention provides a crystal bar processing method for determining a three-dimensional space relation of a crystal bar, and belongs to the technical field of monocrystalline silicon wafer processing. The crystal bar with the crystal orientation of < 100 > deviates from a preset angle when being manufactured into a seed crystal, the seed crystal is subjected to crystal bar drawing, after crystal bar drawing is completed, the deviation angle of the seed crystal is marked on the crystal bar, the drawn crystal bar is subjected to barreling machining, in the barreling machining process, an automatic barreling machine recognizes a mark on the crystal bar, and after barreling of the outer circle of the crystal bar is completed, the mark position serves as a datum plane for measuring the NOTCH crystal orientation through an X-ray machine, and an NOTCH groove is formed; a preset angle is deviated in advance when the seed crystal is manufactured, the deviation direction of the seed crystal deviating from the preset direction is marked on the crystal bar, barreling is conducted on the crystal bar, the NOTCH groove is formed in the marked position so that a fixed space relation can be established between the end face crystal orientation of the crystal bar and a NOTCH datum plane, then the crystal bar is sliced, and the warp value can be stabilized within a range during slicing.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon wafer processing, in particular to a method for processing a crystal rod for determining the three-dimensional spatial relationship of the crystal rod. Background technique [0002] During the processing of semiconductor wafers, the ingot needs to be processed into silicon wafers. During the silicon wafer processing, the warp of the silicon wafer (warp), the total thickness variation of the silicon wafer (TTV), and the geometric parameters of the silicon wafer (BOW) need to be controlled. , local flatness and other important parameters. The current multi-wire cutting method directly affects the warp and BOW value of the silicon wafer, but the warp cannot be improved through subsequent processes. Therefore, reducing the impact of the slicing process on warp is an indispensable process to ensure high-quality wafers. [0003] At present, in the process of improving warp, the angle v...

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Problems solved by technology

[0005] In view of this, the present invention provides a crystal rod processing method for determining the three-dimensional spatial relationship of the crystal rod, so as to solve the problem that the crystal direction of the NOTCH groove direction of the crystal rod in the prior art and the crystal direction of the end face of the crystal rod will form in space. A certain angle leads to a technical problem that the cutting state of the silicon wafer is unstable

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