Pressure control device of semiconductor equipment and semiconductor equipment

Abstract

The invention provides a pressure control device of semiconductor equipment and the semiconductor equipment. The pressure control device is used for controlling the pressure of a process chamber of the semiconductor equipment, and a condensation assembly of the pressure control device is connected with an exhaust port of the process chamber and is used for condensing gas exhausted from the process chamber; a gas-liquid separation component is communicated with the condensation assembly, is used for being communicated with a factory affair exhaust pipeline and is used for being communicated with a factory affair drainage pipeline through the liquid collection component; a pressure detection assembly is used for detecting the pressure of gas in the gas-liquid separation component; the liquid in the liquid collection component is used for balancing the negative pressure of a factory affair exhaust pipeline; an overflow pipe extends into the liquid collection component and is used for discharging liquid exceeding a preset liquid level in the liquid collection component; and a liquid supplementing assembly communicates with the liquid collection component and is used for conveying supplementing liquid to the liquid collection component so that the liquid level of the liquid collection component can reach the preset liquid level. According to the pressure control device of the semiconductor equipment and the semiconductor equipment provided by the invention, the stability and the reliability of the pressure of the process chamber can be improved, so that the semiconductor process result is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular to a pressure control device for semiconductor equipment and the semiconductor equipment. Background technique [0002] The oxidation process is a process of preparing thin films such as silicon dioxide films on the surface of the wafer by using an oxidant by vapor deposition, and the stability of the pressure of the process chamber for the oxidation process determines the density and uniformity of the silicon dioxide film. With the development of the semiconductor industry, the oxidation process has higher requirements on the stability and reliability of the pressure of the process chamber. [0003] Existing semiconductor equipment for performing an oxidation process includes a process chamber, a pressure control device and a pressure control device, wherein the process chamber is used for the oxidation process, and the pressure control device is connected t...

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Problems solved by technology

[0004] However, the existing pressure control device has inaccurate and unstable pressure control on the process chamber during the oxidation process, resulting in poor stability and reliability of the pressure in the process chamber during the oxidation process, resulting in poor oxidation process poor result

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