Flip light-emitting diode chip and preparation method thereof
A technology for light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of Bragg mirror exposure, affecting the luminous efficiency of flip-chip light-emitting diode chips, affecting the quality of Bragg mirrors, etc., to ensure luminous efficiency and Reliability, quality of protection, good effect of surface quality
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[0035] In order to make the objects, technical solutions, and advantages of the present invention, the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0036] figure 1 It is a schematic structural diagram of a flip-loaded light-emitting diode chip provided by the embodiment of the present disclosure, such as figure 1 Design, the present disclosure provides a flip-loaded light-emitting diode chip, and the light-emitting diode chip includes an epitaxial sheet 1, the primary P electrode 2 and the primary N electrode 3, and the epitaxial sheet 1 includes a substrate 11 and sequentially laminated in a substrate 11. The upper N-type layer 12, the light-emitting layer 13, the p-type layer 14, the corrosion cutoff layer 15, the Prague mirror 16 and the first insulating protective layer 17.
[0037] The surface of the Prague mirror 16 has a spaced first receiving groove 161 and a second receiving groove 162, and the first receivin...
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