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Adaptive temperature adjustable non-refrigeration infrared detector

An uncooled infrared detector technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, poor consistency, etc., and achieve the effect of reducing process difficulty, small chip area, and low cost

Active Publication Date: 2021-09-28
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an uncooled infrared detector with adjustable temperature, which solves the problem of low performance, low pixel scale and low yield of infrared detectors in traditional MEMS technology. And problems such as poor consistency, optimize the environmental temperature adaptability of the infrared detector

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Embodiment Construction

[0062] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0063] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0064] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present disclosure. to ...

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Abstract

The invention relates to an adaptive temperature adjustable non-refrigeration infrared detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system, an electrode layer in an absorption plate comprises a plurality of electrode structures, the plurality of electrode structures divide the thermosensitive dielectric layer into at least two thermistors, the CMOS measurement circuit system selects two electrode structures to obtain electric signals output by the two electrode structures, and the CMOS measurement circuit system selects two different electrode structures to obtain the electric signals output by the two electrode structures, so that the temperature-sensitive structure connected to the CMOS measuring circuit system corresponds to at least two normal-temperature equivalent resistors with different resistance values, and the temperature-sensitive structure comprises at least one thermistor; and the two electrode structures output positive and negative signals respectively. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, and the environment temperature adaptability of the infrared detector is optimized.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an uncooled infrared detector with adjustable adaptable temperature. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/24
CPCG01J5/24Y02P70/50
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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