Silicon wafer detection device

Abstract

The invention relates to the technical field of silicon wafer detection equipment and discloses a silicon wafer detection device. The device comprises an image acquisition part, a baffle assembly and a light source assembly, wherein the image acquisition part is used for acquiring an image of an acquisition area on the to-be-detected silicon wafer; the baffle plate assembly is arranged between the image acquisition part and the silicon wafer to be detected and comprises a first baffle plate; the light source assembly comprises two light sources, one light source is located on the first side of the first baffle, the other light source and the image acquisition part are located on the second side of the first baffle, the first side and the second side are arranged oppositely, and light emitted by the light source located on the first side irradiates the first baffle and can be scattered into an acquisition area through the first baffle; and light emitted by the light source located on the second side can reach the collection area from the second side. According to the device, the collected image is uniform in gray level distribution, the contrast ratio of the image is improved, the defect of the silicon wafer is easier to analyze, and detection precision of the silicon wafer is improved.

Description

technical field [0001] The invention relates to the technical field of silicon wafer detection equipment, in particular to a silicon wafer detection device. Background technique [0002] In the field of photovoltaics, in order to ensure the product quality of silicon wafers, it is necessary to detect the defects of silicon wafers. The hidden crack of the silicon wafer is a kind of relatively concealed non-penetrating crack, which is invisible under normal conditions. When the viscose surface is about to be cut through, due to the internal thermal stress of crystalline silicon and the stress in mechanical processing, etc. The cracks caused by various reasons may be located on either side of the silicon wafer because the crack does not penetrate. The traditional detection method is to blow air on the surface of the silicon wafer. During the process of rapid steam covering and rapid drying, the cracks are quickly displayed. and disappear. There are two obvious defects in this...

AI Technical Summary

Problems solved by technology

Among them, the light emitted by the light source is obliquely irradiated on the baffle, and then scattered by the baffle to the silicon wafer, resulting in a lower brightness of the silicon wafer on the side away from the light source, that is, close to the infrared camera, making the collected image darker. It is black on the collected image, which causes the hidden cracks on the image collected by the camera to not be clearly displayed, which makes the gray scale of the collected image uneven and the contrast is poor, which is not conducive to the processing of the collected image and reduces the The detection accuracy also reduces the accuracy of the detection results

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