Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for determining gallium in gallium arsenide wafer production wastewater

A technology for gallium arsenide wafers and waste water production, which is applied in the field of analytical chemistry and can solve problems such as blanks

Pending Publication Date: 2021-09-14
NORTHWEST RES INST OF MINING & METALLURGY INST
View PDF1 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are many studies on the determination of arsenic, COD, BOD, etc. in gallium arsenide wafer production wastewater in general literature, but almost no research on the determination of gallium in wastewater

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for determining gallium in gallium arsenide wafer production wastewater
  • Method for determining gallium in gallium arsenide wafer production wastewater
  • Method for determining gallium in gallium arsenide wafer production wastewater

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: Determination of gallium in 1# gallium arsenide wafer production wastewater

[0036] Pipette 50mL (denoted as V) of gallium arsenide wafer production wastewater from a certain enterprise into a 250mL beaker, add 5mL of 1+1 sulfuric acid, add 5mL of concentrated hydrochloric acid after a little heating, evaporate to 20mL at a low temperature of 40~60℃, and then add concentrated Hydrochloric acid 5mL, repeated evaporation 3 times to remove volatile elements such as arsenic and tin in the wastewater. Until it is nearly dry after evaporating and emitting thick smoke of sulfur trioxide, then add 5.0mL of dilute hydrochloric acid with a concentration of 6mol / L to dissolve the salts, and finally, set the volume to 100mL (denoted as V 1 ) volumetric flask shake well to get the test solution.

[0037] Draw 10.00mL (denoted as V 2 ) test solution in a 25mL colorimetric tube, dropwise add titanium trichloride solution with a mass concentration of 15% to purple, the...

Embodiment 2

[0042] Example 2: Determination of gallium in 2# gallium arsenide wafer production wastewater and verification of the precision of the method

[0043] Pipette 50mL of gallium arsenide wafer production wastewater from a certain company into a 250mL beaker, add 10mL of 1+1 sulfuric acid, add 5mL of concentrated hydrochloric acid after a little heating, evaporate to 30mL at a low temperature of 40~60℃, then add 5mL of concentrated hydrochloric acid, and evaporate repeatedly 4 times to remove volatile elements such as arsenic and tin in wastewater. After evaporating and emitting thick smoke of sulfur trioxide, it is nearly dry, then add 7.0mL of dilute hydrochloric acid with a concentration of 6mol / L to dissolve the salts, and finally, dilute to a 200mL volumetric flask and shake well to obtain a test solution.

[0044] Draw 5.00mL of test solution into a 25mL colorimetric tube, dilute to 10mL with 6mol / L dilute hydrochloric acid, add dropwise 20% titanium trichloride solution to ...

Embodiment 3

[0049] Example 3: Gallium Determination and Method Addition Recovery Experiment of 3# Gallium Arsenide Wafer Production Wastewater

[0050] Pipette three parts of 50mL of gallium arsenide wafer production wastewater in Example 1 into 250mL beakers, add gallium standard solution (1mg / L) 2.00, 4.00, 6.00mL respectively, add 1+1 sulfuric acid 5mL, slightly heat, add Concentrated hydrochloric acid 5mL, low-temperature evaporation to 20mL, then add 5mL concentrated hydrochloric acid, repeated evaporation three times, in order to remove arsenic, tin and other volatile elements in the wastewater. Until it is nearly dry after evaporating and emitting thick smoke of sulfur trioxide, then add 5.0mL of dilute hydrochloric acid with a concentration of 6mol / L to dissolve the salts, and finally, dilute to a 100mL volumetric flask and shake well to obtain a test solution.

[0051] Draw 10.00mL of the test solution into a 25mL colorimetric tube, add dropwise a 15% titanium trichloride solutio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for determining gallium in gallium arsenide wafer production wastewater. The method comprises the following steps of (1) establishing a standard curve, (2) adding 1+1 sulfuric acid into the gallium arsenide wafer production wastewater, slightly heating, then adding concentrated hydrochloric acid, evaporating to 20-30 mL at low temperature, then adding concentrated hydrochloric acid, repeatedly evaporating for 3-4 times until sulfur trioxide dense smoke is generated by evaporation and is nearly dry, then adding diluted hydrochloric acid to dissolve salts, and finally fixing the volume to obtain a test solution, (3) dropwise adding a titanium trichloride solution into the test solution until the test solution is purple, adding 4-6 excessive drops of the titanium trichloride solution after the test solution is stable, uniformly shaking, and standing for 10-15 minutes, (4) adding a rhodamine B solution into the solution obtained in the step (3), and uniformly shaking, adding a benzene solution, shaking and extracting, standing and layering, and taking an organic phase, (5) carrying out absorbance determination on the organic phase, and obtaining the corresponding gallium content from the standard curve by taking benzene as a reference, and (6) repeating the steps (2)-(5) for 6 times, and averaging to obtain the gallium content Ga in the gallium arsenide wafer production wastewater. The method is good in precision and accuracy.

Description

technical field [0001] The invention relates to the field of analytical chemistry, in particular to a method for determining gallium in gallium arsenide wafer production wastewater. Background technique [0002] Due to the advantages of high temperature resistance, high frequency, high output power, high electron mobility, low noise, and strong radiation resistance, gallium arsenide wafers have been widely used in optical fiber communications, broadband satellite wireless communications, test instruments, and computer peripherals in recent years. Design, laser and lighting and other fields. Although gallium arsenide wafers are a relatively important second-generation semiconductor, gallium arsenide wafers are known as "semiconductor nobles" because of the extremely low content of gallium in the earth's crust, and there are many processes in the production process of gallium arsenide wafers, no matter A large amount of waste water is generated during cutting, polishing or gr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31
CPCG01N21/31
Inventor 刘静静边振涛赵坤齐白羽路军兵邓永怀卢昌祥王卓侯雪高正娇赵和存杨卓融
Owner NORTHWEST RES INST OF MINING & METALLURGY INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com