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Method for synthesizing diamond based on microwave plasma reactor

A technology of microwave plasma and diamond synthesis, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve problems such as insufficient gas dissociation, poor diamond quality, etc.

Active Publication Date: 2021-09-14
秦皇岛本征晶体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problems existing in the prior art, the purpose of the present invention is to provide a method for matching suitable process parameters according to the structural changes of the reaction chamber and plasma characteristics, which can effectively solve the problems of insufficient gas dissociation and poor diamond quality. Method for producing diamond in microwave plasma reactor

Method used

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  • Method for synthesizing diamond based on microwave plasma reactor
  • Method for synthesizing diamond based on microwave plasma reactor
  • Method for synthesizing diamond based on microwave plasma reactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A microwave plasma reactor for diamond synthesis, comprising: a microwave generator that generates microwaves with a frequency of 2.45 GHz, a microwave coupler that transmits microwaves generated from the microwave generator To the reaction chamber; the reaction chamber, the reaction chamber includes a chamber wall, a top plate and a base, there is a certain angle between the upper chamber wall and the top plate, and the lower chamber wall is perpendicular to the base; the reaction chamber base is composed of a base plate, an outlet Composed of a gas port and a lifting deposition table; a gas flow system, in which the reaction gas flows into the reaction chamber from the gas inlet of the upper chamber wall and flows out from the gas outlet of the base.

[0043]Preferably, the microwave coupler includes a waveguide, a mode conversion antenna, a baffle piston, and a coupling conversion cavity; the top plate is a quartz plate; a first lifter is set on the base plate, and a ...

Embodiment 2

[0058] The same part of this embodiment and embodiment 1 will not be repeated, and its difference is:

[0059] Preferably, when the angle θ between the upper chamber wall and the top plate is 150°, the numerical ratio of the gas pressure (unit: Pa) and power (unit: W) used for diamond deposition is 3:1; when the upper chamber and the top plate When the angle is 150°, the electric field intensity at the center of the plasma sphere above the lifting deposition table is about 1.6×104V / m, and at the edge is about 1.3×104V / m;

[0060] Preferably, in order to meet the plasma discharge conditions, the heights of the first and second lifters need to be adjusted respectively, the lifting height of the first lifter is 5mm, and the lifting height of the second lifter is 2mm;

[0061] The microwave plasma reactor of the present invention synthesizes diamond through the following steps;

[0062] Step 1: Seed crystal screening: select single crystal diamond seed crystals with the same size...

Embodiment 3

[0072] The same parts of this embodiment and the above-mentioned embodiment will not be repeated, and the difference is:

[0073] Preferably, when the angle θ between the upper side wall and the top plate is 145°, the numerical ratio of the gas pressure (unit: Pa) and power (unit: W) used for diamond deposition is 2.5:1; when the upper chamber and the top plate When the angle is 145°, the electric field intensity at the center of the plasma sphere above the lifting deposition table is about 1.4×104V / m, and at the edge is about 1.2×104V / m;

[0074] Preferably, in order to meet the plasma discharge conditions, the heights of the first and second lifters need to be adjusted respectively, the lifting height of the first lifter is 8mm, and the lifting height of the second lifter is 3mm;

[0075] The microwave plasma reactor of the present invention synthesizes diamond through the following steps;

[0076] Step 1: Seed crystal screening: select single crystal diamond seed crystals ...

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Abstract

The invention relates to the technical field of chemical vapor deposition, in particular to a method for synthesizing diamond based on a microwave plasma reactor. The method comprises the following steps: 1, screening seed crystals; 2, carrying out seed crystal pretreatment; 3, processing a cavity of a reaction cavity; 4, preventing seed crystals; 5, adjusting the reaction air pressure, adjusting the microwave input power, and exciting plasma; 6, adjusting the height of a first lifter and the height of a second lifter; 7, adjusting power and reaction air pressure; 8, carrying out diamond deposition; and 9, carrying out shutdown processing. According to the invention, through integral method control, the stability of the plasma ball is ensured, and the phenomenon that the plasma ball moves upwards is avoided; and reaction gas can be fully dissociated when the ratio of the reaction gas pressure to the power value ranges from 2 / 1 to 3 / 1, and the quality and the speed of grown diamonds are obviously improved.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a method for synthesizing diamond based on a microwave plasma reactor. Background technique [0002] Due to its excellent properties such as high hardness, high thermal conductivity, high chemical inertness, high optical transparency, high band gap and high carrier concentration, diamond is widely used in mechanical processing, heat sinks of high-power devices, and high-power wave-transparent windows. It has great application value in high-precision fields such as semiconductor devices and semiconductor chips; in the above-mentioned high-precision fields, there are strict requirements on the size and quality of diamonds. Compared with other chemical deposition methods, microwave plasma chemical vapor deposition has the advantages of electrodeless discharge, high energy conversion efficiency, and pure plasma, and is considered to be the preferred method for prepa...

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/20C30B25/16C23C16/511C23C16/27C23C16/02
CPCC30B29/04C30B25/186C30B25/205C30B25/16C23C16/274C23C16/511C23C16/0227
Inventor 李庆利甄西合徐悟生赵丽媛朱逢锐朱逢旭杨春晖
Owner 秦皇岛本征晶体科技有限公司
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