Three-dimensional integrated high-efficiency heat dissipation packaging structure and preparation method thereof

Abstract

The invention relates to the technical field of microelectronic heat dissipation, and particularly discloses a three-dimensional integrated efficient heat dissipation packaging structure and a preparation method thereof. The packaging structure comprises a first packaging substrate, a second packaging substrate, a heat dissipation micro-channel, a first chip, a second chip, a cover plate, an enclosure frame, a liquid cooling connector and an electric connector; the heat dissipation micro-channel and the enclosure frame are welded on the first packaging substrate; the first chip is welded on the heat dissipation micro-channel and is interconnected with a surface bonding pad of the first packaging substrate; the second chip is welded on the second packaging substrate and is interconnected with a surface bonding pad of the second packaging substrate; the cover plate is welded on the enclosure frame for sealing; and the liquid cooling connector and the electric connector are welded between the first packaging substrate and the second packaging substrate, and the liquid cooling connector and the electric connector are also welded on the second packaging substrate. According to the invention, the electromagnetic compatibility requirement of microwave signals can be met while high-heat-flux heat dissipation is realized.

Description

technical field [0001] The invention relates to the field of microelectronic heat dissipation technology, in particular to a three-dimensional integrated high-efficiency heat dissipation packaging structure and a preparation method thereof. Background technique [0002] With the development of microelectronics technology, the integration density of electronic systems is gradually increasing. The traditional planar high-density integration method can no longer meet the application requirements. It is necessary to use three-dimensional integration technology to change the traditional planar integration method into a three-dimensional integration method. At the same time, the widespread use of third-generation semiconductor technologies represented by GaN has gradually increased the power density of microwave power devices. Correspondingly, the heat flux density of power chips is increasing day by day, and thermal management has gradually become one of the technical bottlenecks...

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Problems solved by technology

[0003] At present, there are many patents on three-dimensional integrated high-efficiency heat dissipation structures: for example, Chinese patent ZL201811374347.7 proposes a three-dimensional active heat dissipation packaging structure embedded in micro-channels and its manufacturing process, which realizes three-dimensional integration of efficient heat dissipation structures; however, this patent The air cavity problem of the microwave power chip is not considered

Chinese patent ZL201810601226.5 proposes a three-dimensional heterogeneous structure packaging method for heat dissipation of high-power GaN devices, which realizes three-dimensional integration for microwave applications; high cost

[0004] How to construct a three-dimensional integrated high-efficiency heat dissipation packaging structure for typical microwave multi-chip module applications, while achieving high heat flux dissipation and meeting the electromagnetic compatibility requirements of microwave signals, is still rarely reported.

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