Piezoresistive beam stress concentration micro-pressure sensor chip and preparation method thereof

A technology of micro-pressure sensor and stress concentration, applied in the measurement of the force of the piezoelectric resistance material, piezoelectric/electrostrictive/magnetostrictive devices, fluid pressure measurement by changing the ohmic resistance, etc., can solve the problem of sensor Low sensitivity, impact on sensor linearity and dynamic performance, difficulty in reconciling micro-pressure sensor sensitivity and dynamic performance, etc., to achieve high dynamic response capability, increase etching difficulty, and improve measurement sensitivity

Active Publication Date: 2021-08-24
XI AN JIAOTONG UNIV +2
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Problems solved by technology

For beam-membrane structures and beam-membrane island structures including beam structures, the varistor strips need to be arranged in a straight line perpendicular to the beam structure, and the width of the beam structure cannot be lower than the width of the varistor strips, so the beam structure cannot be made narrower. , and the sensitivity of the sensor is inversely proportional to the width of the beam structure, resulting in a low sensiti...

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  • Piezoresistive beam stress concentration micro-pressure sensor chip and preparation method thereof
  • Piezoresistive beam stress concentration micro-pressure sensor chip and preparation method thereof
  • Piezoresistive beam stress concentration micro-pressure sensor chip and preparation method thereof

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Embodiment Construction

[0050] In order to make the purpose and technical solution of the present invention clearer and easier to understand. The present invention will be further described in detail below in conjunction with the drawings and embodiments. The specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0051] In describing the present invention, it should be understood that the terms "central", "longitudinal", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and th...

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Abstract

The invention discloses a piezoresistive beam stress concentration micro-pressure sensor chip and a preparation method thereof, the sensor chip comprises a silicon substrate and a glass substrate, the back surface of the silicon substrate is etched with a back cavity, the bottom surface of the back cavity is a pressure-bearing film, and the front surface of the pressure-bearing film is provided with a first piezoresistive beam, a second piezoresistive beam, a third piezoresistive beam and a fourth piezoresistive beam; the first piezoresistive beam, the second piezoresistive beam, the third piezoresistive beam and the fourth piezoresistive beam are respectively provided with piezoresistor strips respectively, the length direction of each piezoresistor strip is the same as the length direction of the piezoresistive beam where the piezoresistor strip is located, and the piezoresistor strips are connected through metal leads and metal bonding pads to form a Wheatstone bridge. The problem that the beam structure cannot be narrower because the width of the beam structure must be larger than the width of the piezoresistor strips due to the fact that the piezoresistor strips on a traditional beam structure are arranged perpendicular to the straight line where the beam structure is located is solved.

Description

technical field [0001] The invention belongs to the technical field of micro-electromechanical sensors, in particular to a piezoresistive beam stress concentration micro-pressure sensor chip and a preparation method thereof. Background technique [0002] With the development of MEMS technology, micro-pressure sensors have been widely used in aerospace, food industry, smart home, biomedical and other fields; with the rapid development of various fields, there are higher requirements for the performance and volume of sensors. Especially in the field of biomedicine, there is an urgent need for micro-pressure measurement sensors with stable performance, high dynamics, and high sensitivity to guarantee. [0003] According to different measurement principles, MEMS micro-pressure sensors are mainly divided into piezoresistive, piezoelectric, capacitive, and resonant. Compared with MEMS micro-pressure sensors with other principles, MEMS piezoresistive micro-pressure sensors are wid...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L9/06B81B7/02B81C1/00
CPCG01L1/18G01L9/06B81B7/02B81C1/00015B81B2201/0264
Inventor 赵立波李学琛韩香广李伟乔智霞皇咪咪徐廷中杨萍王李陈翠兰王鸿雁关卫军吴永顺罗国希王永录魏于昆山涛蒋庄德
Owner XI AN JIAOTONG UNIV
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