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Two-dimensional heterojunction array device and preparation method thereof

A two-dimensional heterojunction and heterojunction technology, which is applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc. control, non-standard field effect transistors, etc., to achieve the effect of improving preparation efficiency and preparation yield, improving application value, and avoiding negative effects

Active Publication Date: 2021-08-20
HUNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, two-dimensional materials prepared by vapor deposition generally have the disadvantages of uncontrollable size and many defects. The field effect transistors constructed based on this method are non-standard, poor in performance, and their electrical properties are far lower than expected. Two-dimensional materials are difficult to build high-performance, arrayed field-effect transistors

Method used

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  • Two-dimensional heterojunction array device and preparation method thereof
  • Two-dimensional heterojunction array device and preparation method thereof
  • Two-dimensional heterojunction array device and preparation method thereof

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preparation example Construction

[0064] The device-controllable preparation method of the metal-semiconductor heterojunction array is further given below, including the following steps:

[0065] Step 1, the Si / SiO 2 Substrates 1 and 2 were ultrasonically cleaned with organic solvents, followed by ultrasonic cleaning in the order of acetone (5-10min) → isopropanol (10-15min) → deionized water (10-20min), and finally cleaned the residue on the substrate with a nitrogen gun Dry with deionized water to get clean Si / SiO 2 base.

[0066] Step 2, Si / SiO obtained in the previous step 2 WSe grown on substrate 2 / SnS 2 vertical heterojunction. Si / SiO 2 The substrate is placed in a tube furnace, and the underlying material WSe is grown for the first time 2 , place the tungsten diselenide powder in the center of the furnace, and place a piece of SiO2 downstream of the quartz tube 2 / Si substrate. At the beginning, inject 400SCCM Ar gas into the tube for 15 minutes to ensure the stability of the chemical reaction...

Embodiment 1

[0072] An optical photo of an array device based on a metal-semiconductor heterojunction Figure 5 , as shown in 6 and 7, Figure 5 It is the corresponding physical figure in step 3 of the specific implementation mode, Figure 6 It is the corresponding physical figure in step 4 of the specific implementation mode, Figure 7 It is the physical diagram corresponding to the fifth step of the specific implementation manner.

[0073] Such as Figure 5 As shown, from bottom to top including Si substrate 1, SiO 2 Insulation layer 2, channel material WSe 2 3. Contact material SnS 2 4. Positive and negative metal electrodes 5 and 6. The channel material WSe 2 3 and contact material SnS 2 4 in Si / SiO 2 On the substrate, obtained by a two-step vapor phase growth method, WSe 2 Material thickness is 1.5nm (two layers), SnS 2 The thickness of the material is 0.8nm (one layer). The electrode pattern is made by electron beam exposure, and the positive and negative electrodes 5 a...

Embodiment 2

[0078]Other conditions are all identical with embodiment 1. Only the plasma etching time is different (10s etching time).

[0079] Similarly, the obtained non-standard metal-semiconductor heterojunction array device is directly etched in the Plasma etching system, and the SnS on the upper layer of the channel is etched 2 etch away, leaving the channel material WSe 2 , while the contact material SnS under the metal electrode 2 are naturally preserved to improve the properties of individual devices. This completes the fabrication of an example metal-semiconductor heterojunction-based array device. The parameter of described Plasma etching is: Low power (knob selection gear Power 10%); Etching time is 10s; Etching gas selects N 2 and O 2 The mixed gas, the gas flow rate is 0.5NL / min.

[0080] Such as Figure 9 As shown, comparing the processing time of Plasma 10s and Plasma 20s, the maximum current value changed from 9.7μA to 10.2μA, basically remained unchanged, but the s...

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Abstract

The invention discloses a two-dimensional semiconductor heterojunction array device and a preparation method thereof. The two-dimensional semiconductor heterojunction array device comprises a substrate, channel material layer arrays located on the substrate, two contact layers located on each channel material layer at intervals, and a source electrode and a drain electrode which respectively located on the two contact layers, the channel material layer and the contact layer are made of an integrally formed WSe2 / SnS2 heterojunction material, the channel material layer is made of a WSe2 material, and the contact layer is made of a SnS2 material. SnS2 is used as the contact layer between the metal electrode and the bottom layer WSe2 material and plays roles in protecting the material in contact with the electrode, reducing the contact resistance and improving the performance of the device.

Description

technical field [0001] The invention relates to a two-dimensional semiconductor heterojunction array device and a preparation method thereof, belonging to the technical field of two-dimensional field-effect transistor preparation. Background technique [0002] Two-dimensional materials usually refer to materials in the nanoscale range (1-100nm) in two dimensions. It was proposed in 2004 with the successful separation of a single atomic layer material - graphene by the Geim group at the University of Manchester. The methods of two-dimensional materials mainly include mechanical exfoliation method, chemical vapor deposition method, physical vapor deposition method, solution method and so on. Compared with bulk materials, two-dimensional materials have many advantages. For example, the atomic-level thickness structure has a natural immune effect on the short channel effect, and its excellent mechanical strength makes it have great application potential in the field of flexible ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/24H01L29/778H01L21/8232
CPCH01L27/0218H01L27/0203H01L21/8232H01L29/24H01L29/7786Y02P70/50
Inventor 李东朱晨光朱小莉潘安练
Owner HUNAN UNIV
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